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Operational frequency degradation induced trapping in scaled GaN HEMTs

Brendan Ubochi, Soroush Faramehr, Khaled Ahmeda, Petar Igić, Karol Kalna Orcid Logo

Microelectronics Reliability, Volume: 71, Pages: 35 - 40

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1016/j.microrel.2017.02.008

Abstract

Cut-off frequency increase from 12.1 GHz to 26.4 GHz, 52.1 GHz and 91.4 GHz is observed when the 1 μm gate length GaN HEMT is laterally scaled down to LG = 0.5 μm, LG = 0.25 μm and LG = 0.125 μm, respectively. The study is based on accurately calibrated transfer characteristics (ID-VGS) of the 1 μm...

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Published in: Microelectronics Reliability
ISSN: 0026-2714
Published: 2017
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URI: https://cronfa.swan.ac.uk/Record/cronfa32025
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first_indexed 2017-02-21T20:02:21Z
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fullrecord <?xml version="1.0"?><rfc1807><datestamp>2022-10-10T15:48:05.6504131</datestamp><bib-version>v2</bib-version><id>32025</id><entry>2017-02-21</entry><title>Operational frequency degradation induced trapping in scaled GaN HEMTs</title><swanseaauthors><author><sid>1329a42020e44fdd13de2f20d5143253</sid><ORCID>0000-0002-6333-9189</ORCID><firstname>Karol</firstname><surname>Kalna</surname><name>Karol Kalna</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2017-02-21</date><deptcode>EEEG</deptcode><abstract>Cut-off frequency increase from 12.1 GHz to 26.4 GHz, 52.1 GHz and 91.4 GHz is observed when the 1 &#x3BC;m gate length GaN HEMT is laterally scaled down to LG = 0.5 &#x3BC;m, LG = 0.25 &#x3BC;m and LG = 0.125 &#x3BC;m, respectively. The study is based on accurately calibrated transfer characteristics (ID-VGS) of the 1 &#x3BC;m gate length device using Silvaco TCAD. If the scaling is also performed horizontally, proportionally to the lateral (full scaling), the maximum drain current is reduced by 38.2% when the gate-to-channel separation scales from 33 nm to 8.25 nm. Degradation of the RF performance of a GaN HEMT due to the electric field induced acceptor traps experienced under a high electrical stress is found to be about 8% for 1 &#x3BC;m gate length device. The degradation of scaled HEMTs reduces to 3.5% and 7.3% for the 0.25 &#x3BC;m and 0.125 gate length devices, respectively. The traps at energy level of ET = EV + 0.9 eV (carbon) with concentrations of NIT = 5 &#xD7; 1016cm&#x2212; 3, NIT = 5 &#xD7; 1017cm&#x2212; 3 and NIT = 5 &#xD7; 1018cm&#x2212; 3 are located in the drain access region where highest electrical field is expected. The effect of traps on the cut-off frequency is reduced for devices with shorter gate lengths down to 0.125 &#x3BC;m.</abstract><type>Journal Article</type><journal>Microelectronics Reliability</journal><volume>71</volume><journalNumber/><paginationStart>35</paginationStart><paginationEnd>40</paginationEnd><publisher/><placeOfPublication/><isbnPrint/><isbnElectronic/><issnPrint>0026-2714</issnPrint><issnElectronic/><keywords>GaN HEMTs; Traps; Degradation; Radio frequency; Device modelling</keywords><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2017</publishedYear><publishedDate>2017-12-31</publishedDate><doi>10.1016/j.microrel.2017.02.008</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><funders/><projectreference/><lastEdited>2022-10-10T15:48:05.6504131</lastEdited><Created>2017-02-21T13:31:06.9577760</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Brendan</firstname><surname>Ubochi</surname><order>1</order></author><author><firstname>Soroush</firstname><surname>Faramehr</surname><order>2</order></author><author><firstname>Khaled</firstname><surname>Ahmeda</surname><order>3</order></author><author><firstname>Petar</firstname><surname>Igi&#x107;</surname><order>4</order></author><author><firstname>Karol</firstname><surname>Kalna</surname><orcid>0000-0002-6333-9189</orcid><order>5</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2022-10-10T15:48:05.6504131 v2 32025 2017-02-21 Operational frequency degradation induced trapping in scaled GaN HEMTs 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2017-02-21 EEEG Cut-off frequency increase from 12.1 GHz to 26.4 GHz, 52.1 GHz and 91.4 GHz is observed when the 1 μm gate length GaN HEMT is laterally scaled down to LG = 0.5 μm, LG = 0.25 μm and LG = 0.125 μm, respectively. The study is based on accurately calibrated transfer characteristics (ID-VGS) of the 1 μm gate length device using Silvaco TCAD. If the scaling is also performed horizontally, proportionally to the lateral (full scaling), the maximum drain current is reduced by 38.2% when the gate-to-channel separation scales from 33 nm to 8.25 nm. Degradation of the RF performance of a GaN HEMT due to the electric field induced acceptor traps experienced under a high electrical stress is found to be about 8% for 1 μm gate length device. The degradation of scaled HEMTs reduces to 3.5% and 7.3% for the 0.25 μm and 0.125 gate length devices, respectively. The traps at energy level of ET = EV + 0.9 eV (carbon) with concentrations of NIT = 5 × 1016cm− 3, NIT = 5 × 1017cm− 3 and NIT = 5 × 1018cm− 3 are located in the drain access region where highest electrical field is expected. The effect of traps on the cut-off frequency is reduced for devices with shorter gate lengths down to 0.125 μm. Journal Article Microelectronics Reliability 71 35 40 0026-2714 GaN HEMTs; Traps; Degradation; Radio frequency; Device modelling 31 12 2017 2017-12-31 10.1016/j.microrel.2017.02.008 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2022-10-10T15:48:05.6504131 2017-02-21T13:31:06.9577760 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Brendan Ubochi 1 Soroush Faramehr 2 Khaled Ahmeda 3 Petar Igić 4 Karol Kalna 0000-0002-6333-9189 5
title Operational frequency degradation induced trapping in scaled GaN HEMTs
spellingShingle Operational frequency degradation induced trapping in scaled GaN HEMTs
Karol Kalna
title_short Operational frequency degradation induced trapping in scaled GaN HEMTs
title_full Operational frequency degradation induced trapping in scaled GaN HEMTs
title_fullStr Operational frequency degradation induced trapping in scaled GaN HEMTs
title_full_unstemmed Operational frequency degradation induced trapping in scaled GaN HEMTs
title_sort Operational frequency degradation induced trapping in scaled GaN HEMTs
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 Brendan Ubochi
Soroush Faramehr
Khaled Ahmeda
Petar Igić
Karol Kalna
format Journal article
container_title Microelectronics Reliability
container_volume 71
container_start_page 35
publishDate 2017
institution Swansea University
issn 0026-2714
doi_str_mv 10.1016/j.microrel.2017.02.008
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
description Cut-off frequency increase from 12.1 GHz to 26.4 GHz, 52.1 GHz and 91.4 GHz is observed when the 1 μm gate length GaN HEMT is laterally scaled down to LG = 0.5 μm, LG = 0.25 μm and LG = 0.125 μm, respectively. The study is based on accurately calibrated transfer characteristics (ID-VGS) of the 1 μm gate length device using Silvaco TCAD. If the scaling is also performed horizontally, proportionally to the lateral (full scaling), the maximum drain current is reduced by 38.2% when the gate-to-channel separation scales from 33 nm to 8.25 nm. Degradation of the RF performance of a GaN HEMT due to the electric field induced acceptor traps experienced under a high electrical stress is found to be about 8% for 1 μm gate length device. The degradation of scaled HEMTs reduces to 3.5% and 7.3% for the 0.25 μm and 0.125 gate length devices, respectively. The traps at energy level of ET = EV + 0.9 eV (carbon) with concentrations of NIT = 5 × 1016cm− 3, NIT = 5 × 1017cm− 3 and NIT = 5 × 1018cm− 3 are located in the drain access region where highest electrical field is expected. The effect of traps on the cut-off frequency is reduced for devices with shorter gate lengths down to 0.125 μm.
published_date 2017-12-31T03:39:10Z
_version_ 1763751756712378368
score 11.037319

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