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Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs

Steven J. Duffy, Brahim Benbakhti, Karol Kalna Orcid Logo, Mohammed Boucherta, Wei D. Zhang, Nour E. Bourzgui, Ali Soltani

IEEE Access, Volume: 6, Pages: 42721 - 42728

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1109/ACCESS.2018.2861323

Abstract

Temperature distributions in AlGaN$/$GaN TLM structures and devices are characterized and analysed using Infrascope temperature mapping system. For the first time, a substantial rise of channel temperature at the inner ends of Ohmic contacts has been observed. The X-ray diffraction technique combine...

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Published in: IEEE Access
ISSN: 2169-3536
Published: 2018
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URI: https://cronfa.swan.ac.uk/Record/cronfa44608
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Abstract: Temperature distributions in AlGaN$/$GaN TLM structures and devices are characterized and analysed using Infrascope temperature mapping system. For the first time, a substantial rise of channel temperature at the inner ends of Ohmic contacts has been observed. The X-ray diffraction technique combined with drift-diffusion simulations show that reduction in a strain at the vicinity of Ohmic contacts increases electric field at these locations resulting in the rise of lattice temperature. The thermal coupling of a high conductive tensile region at the contacts to a low conductive channel region is an origin of the temperature rise observed in both short and long channel structures and devices.
College: Faculty of Science and Engineering
Start Page: 42721
End Page: 42728

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