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Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs

Steven J. Duffy, Brahim Benbakhti, Karol Kalna Orcid Logo, Mohammed Boucherta, Wei D. Zhang, Nour E. Bourzgui, Ali Soltani

IEEE Access, Volume: 6, Pages: 42721 - 42728

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1109/ACCESS.2018.2861323

Abstract

Temperature distributions in AlGaN$/$GaN TLM structures and devices are characterized and analysed using Infrascope temperature mapping system. For the first time, a substantial rise of channel temperature at the inner ends of Ohmic contacts has been observed. The X-ray diffraction technique combine...

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Published in: IEEE Access
ISSN: 2169-3536
Published: 2018
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URI: https://cronfa.swan.ac.uk/Record/cronfa44608
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first_indexed 2018-09-26T12:59:59Z
last_indexed 2018-10-09T15:17:08Z
id cronfa44608
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spelling 2018-10-09T11:38:24.9998331 v2 44608 2018-09-26 Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2018-09-26 EEEG Temperature distributions in AlGaN$/$GaN TLM structures and devices are characterized and analysed using Infrascope temperature mapping system. For the first time, a substantial rise of channel temperature at the inner ends of Ohmic contacts has been observed. The X-ray diffraction technique combined with drift-diffusion simulations show that reduction in a strain at the vicinity of Ohmic contacts increases electric field at these locations resulting in the rise of lattice temperature. The thermal coupling of a high conductive tensile region at the contacts to a low conductive channel region is an origin of the temperature rise observed in both short and long channel structures and devices. Journal Article IEEE Access 6 42721 42728 2169-3536 20 8 2018 2018-08-20 10.1109/ACCESS.2018.2861323 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2018-10-09T11:38:24.9998331 2018-09-26T09:56:57.4993757 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Steven J. Duffy 1 Brahim Benbakhti 2 Karol Kalna 0000-0002-6333-9189 3 Mohammed Boucherta 4 Wei D. Zhang 5 Nour E. Bourzgui 6 Ali Soltani 7 0044608-08102018143938.pdf duffy2018(3).pdf 2018-10-08T14:39:38.5670000 Output 10006522 application/pdf Version of Record true 2018-10-08T00:00:00.0000000 true eng
title Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs
spellingShingle Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs
Karol Kalna
title_short Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs
title_full Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs
title_fullStr Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs
title_full_unstemmed Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs
title_sort Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 Steven J. Duffy
Brahim Benbakhti
Karol Kalna
Mohammed Boucherta
Wei D. Zhang
Nour E. Bourzgui
Ali Soltani
format Journal article
container_title IEEE Access
container_volume 6
container_start_page 42721
publishDate 2018
institution Swansea University
issn 2169-3536
doi_str_mv 10.1109/ACCESS.2018.2861323
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Temperature distributions in AlGaN$/$GaN TLM structures and devices are characterized and analysed using Infrascope temperature mapping system. For the first time, a substantial rise of channel temperature at the inner ends of Ohmic contacts has been observed. The X-ray diffraction technique combined with drift-diffusion simulations show that reduction in a strain at the vicinity of Ohmic contacts increases electric field at these locations resulting in the rise of lattice temperature. The thermal coupling of a high conductive tensile region at the contacts to a low conductive channel region is an origin of the temperature rise observed in both short and long channel structures and devices.
published_date 2018-08-20T03:55:54Z
_version_ 1763752808635432960
score 11.037581

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