Journal article 1366 views 278 downloads
Buffer Trap Related Knee Walkout and the Effects of Self-Heating in AlGaN/GaN HEMTs
Brendan Ubochi,
Khaled Ahmeda,
Karol Kalna 
ECS Journal of Solid State Science and Technology, Volume: 6, Issue: 11, Pages: S3005 - S3009
Swansea University Author:
Karol Kalna
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DOI (Published version): 10.1149/2.0021711jss
Abstract
Mixed-mode simulations of a class A amplifier is used to study the DC/RF dispersion commonly observed in AlGaN/GaN based HEMTs. We show that the observed knee walkout at frequencies greater than the emission rates of buffer traps (time constants tae > 1 week) is related to the steady state trap d...
| Published in: | ECS Journal of Solid State Science and Technology |
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| ISSN: | 2162-8769 2162-8777 |
| Published: |
http://jss.ecsdl.org/content/6/11.toc
2017
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa35705 |
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| Abstract: |
Mixed-mode simulations of a class A amplifier is used to study the DC/RF dispersion commonly observed in AlGaN/GaN based HEMTs. We show that the observed knee walkout at frequencies greater than the emission rates of buffer traps (time constants tae > 1 week) is related to the steady state trap density and spatial location due to the DC operational bias. An increase in the drain bias point and an initial distortion of the RF signal, that is expected to disappear as the device global temperature reduces, is observed when a self-heating model is included. Finally, we propose that a reduction in the DC/RF dispersion is possible with a suitable location and concentration of an acceptor doping in the buffer. |
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| Keywords: |
Class A Amplifier, DC/RF Dispersion, Device Modelling, GaN HEMTs, Traps |
| College: |
Faculty of Science and Engineering |
| Issue: |
11 |
| Start Page: |
S3005 |
| End Page: |
S3009 |