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Buffer Trap Related Knee Walkout and the Effects of Self-Heating in AlGaN/GaN HEMTs

Brendan Ubochi, Khaled Ahmeda, Karol Kalna Orcid Logo

ECS Journal of Solid State Science and Technology, Volume: 6, Issue: 11, Pages: S3005 - S3009

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1149/2.0021711jss

Abstract

Mixed-mode simulations of a class A amplifier is used to study the DC/RF dispersion commonly observed in AlGaN/GaN based HEMTs. We show that the observed knee walkout at frequencies greater than the emission rates of buffer traps (time constants tae > 1 week) is related to the steady state trap d...

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Published in: ECS Journal of Solid State Science and Technology
ISSN: 2162-8769 2162-8777
Published: http://jss.ecsdl.org/content/6/11.toc 2017
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URI: https://cronfa.swan.ac.uk/Record/cronfa35705
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first_indexed 2017-09-28T18:58:52Z
last_indexed 2018-02-09T05:27:10Z
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spelling 2017-11-14T15:53:27.3122745 v2 35705 2017-09-28 Buffer Trap Related Knee Walkout and the Effects of Self-Heating in AlGaN/GaN HEMTs 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2017-09-28 EEEG Mixed-mode simulations of a class A amplifier is used to study the DC/RF dispersion commonly observed in AlGaN/GaN based HEMTs. We show that the observed knee walkout at frequencies greater than the emission rates of buffer traps (time constants tae > 1 week) is related to the steady state trap density and spatial location due to the DC operational bias. An increase in the drain bias point and an initial distortion of the RF signal, that is expected to disappear as the device global temperature reduces, is observed when a self-heating model is included. Finally, we propose that a reduction in the DC/RF dispersion is possible with a suitable location and concentration of an acceptor doping in the buffer. Journal Article ECS Journal of Solid State Science and Technology 6 11 S3005 S3009 http://jss.ecsdl.org/content/6/11.toc 2162-8769 2162-8777 Class A Amplifier, DC/RF Dispersion, Device Modelling, GaN HEMTs, Traps 14 7 2017 2017-07-14 10.1149/2.0021711jss COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2017-11-14T15:53:27.3122745 2017-09-28T15:39:55.9840323 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Brendan Ubochi 1 Khaled Ahmeda 2 Karol Kalna 0000-0002-6333-9189 3 0035705-03102017150320.pdf ubochi2017.pdf 2017-10-03T15:03:20.5700000 Output 1204455 application/pdf Version of Record true 2017-10-03T00:00:00.0000000 true eng
title Buffer Trap Related Knee Walkout and the Effects of Self-Heating in AlGaN/GaN HEMTs
spellingShingle Buffer Trap Related Knee Walkout and the Effects of Self-Heating in AlGaN/GaN HEMTs
Karol Kalna
title_short Buffer Trap Related Knee Walkout and the Effects of Self-Heating in AlGaN/GaN HEMTs
title_full Buffer Trap Related Knee Walkout and the Effects of Self-Heating in AlGaN/GaN HEMTs
title_fullStr Buffer Trap Related Knee Walkout and the Effects of Self-Heating in AlGaN/GaN HEMTs
title_full_unstemmed Buffer Trap Related Knee Walkout and the Effects of Self-Heating in AlGaN/GaN HEMTs
title_sort Buffer Trap Related Knee Walkout and the Effects of Self-Heating in AlGaN/GaN HEMTs
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 Brendan Ubochi
Khaled Ahmeda
Karol Kalna
format Journal article
container_title ECS Journal of Solid State Science and Technology
container_volume 6
container_issue 11
container_start_page S3005
publishDate 2017
institution Swansea University
issn 2162-8769
2162-8777
doi_str_mv 10.1149/2.0021711jss
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Mixed-mode simulations of a class A amplifier is used to study the DC/RF dispersion commonly observed in AlGaN/GaN based HEMTs. We show that the observed knee walkout at frequencies greater than the emission rates of buffer traps (time constants tae > 1 week) is related to the steady state trap density and spatial location due to the DC operational bias. An increase in the drain bias point and an initial distortion of the RF signal, that is expected to disappear as the device global temperature reduces, is observed when a self-heating model is included. Finally, we propose that a reduction in the DC/RF dispersion is possible with a suitable location and concentration of an acceptor doping in the buffer.
published_date 2017-07-14T03:44:30Z
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score 11.037319

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