Journal article 734 views 233 downloads
A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs
S. J. Duffy,
B. Benbakhti,
W. Zhang,
K. Ahmeda,
Karol Kalna 
,
M. Boucherta,
M. Mattalah,
H. O. Chahdi,
N. E. Bourzgui,
A. Soltani
,
M. Boucherta,
M. Mattalah,
H. O. Chahdi,
N. E. Bourzgui,
A. Soltani
IEEE Transactions on Electron Devices, Volume: 67, Issue: 5, Pages: 1924 - 1930
Swansea University Author:
Karol Kalna
-
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DOI (Published version): 10.1109/ted.2020.2980329
Abstract
A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN HEMTs under a normal device operation: self-heating and charge trapping. A unique approach that investigates charge trapping using both source (I_S) and drain (I_D) transient...
| Published in: | IEEE Transactions on Electron Devices |
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| ISSN: | 0018-9383 1557-9646 |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2020
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa54035 |
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| Abstract: |
A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN HEMTs under a normal device operation: self-heating and charge trapping. A unique approach that investigates charge trapping using both source (I_S) and drain (I_D) transient currents for the first time. Two types of charge trapping mechanisms are identified: (i) bulk charge trapping occurring on a time scale of less than 1 ms, followed by (ii) surface charge trapping with a time constant larger than a millisecond. Through monitoring the difference between I_S and I_D, a bulk charge trapping time constant is found to be independent of both drain (V_DS) and gate (V_GS) biases. Surface charge trapping is found to have a much greater impact on a slow degradation when compared to bulk trapping and self-heating. At a short timescale (<1 ms), the RF performance is mainly restricted by both bulk charge trapping and self-heating effects. However, at a longer time (>1 ms), the dynamic ON resistance degradation is predominantly limited by surface charge trapping. |
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| College: |
Faculty of Science and Engineering |
| Issue: |
5 |
| Start Page: |
1924 |
| End Page: |
1930 |