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A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs

S. J. Duffy, B. Benbakhti, W. Zhang, K. Ahmeda, Karol Kalna Orcid Logo, M. Boucherta, M. Mattalah, H. O. Chahdi, N. E. Bourzgui, A. Soltani

IEEE Transactions on Electron Devices, Volume: 67, Issue: 5, Pages: 1924 - 1930

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1109/ted.2020.2980329

Abstract

A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN HEMTs under a normal device operation: self-heating and charge trapping. A unique approach that investigates charge trapping using both source (I_S) and drain (I_D) transient...

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Published in: IEEE Transactions on Electron Devices
ISSN: 0018-9383 1557-9646
Published: Institute of Electrical and Electronics Engineers (IEEE) 2020
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URI: https://cronfa.swan.ac.uk/Record/cronfa54035
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spelling 2022-10-10T15:45:57.8130127 v2 54035 2020-04-24 A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2020-04-24 EEEG A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN HEMTs under a normal device operation: self-heating and charge trapping. A unique approach that investigates charge trapping using both source (I_S) and drain (I_D) transient currents for the first time. Two types of charge trapping mechanisms are identified: (i) bulk charge trapping occurring on a time scale of less than 1 ms, followed by (ii) surface charge trapping with a time constant larger than a millisecond. Through monitoring the difference between I_S and I_D, a bulk charge trapping time constant is found to be independent of both drain (V_DS) and gate (V_GS) biases. Surface charge trapping is found to have a much greater impact on a slow degradation when compared to bulk trapping and self-heating. At a short timescale (<1 ms), the RF performance is mainly restricted by both bulk charge trapping and self-heating effects. However, at a longer time (>1 ms), the dynamic ON resistance degradation is predominantly limited by surface charge trapping. Journal Article IEEE Transactions on Electron Devices 67 5 1924 1930 Institute of Electrical and Electronics Engineers (IEEE) 0018-9383 1557-9646 1 5 2020 2020-05-01 10.1109/ted.2020.2980329 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2022-10-10T15:45:57.8130127 2020-04-24T11:19:21.2944723 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering S. J. Duffy 1 B. Benbakhti 2 W. Zhang 3 K. Ahmeda 4 Karol Kalna 0000-0002-6333-9189 5 M. Boucherta 6 M. Mattalah 7 H. O. Chahdi 8 N. E. Bourzgui 9 A. Soltani 10 54035__17205__0059c2870111439588ed8ded24854511.pdf 54035.pdf 2020-05-07T14:59:31.3921396 Output 1213555 application/pdf Accepted Manuscript true true eng
title A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs
spellingShingle A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs
Karol Kalna
title_short A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs
title_full A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs
title_fullStr A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs
title_full_unstemmed A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs
title_sort A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 S. J. Duffy
B. Benbakhti
W. Zhang
K. Ahmeda
Karol Kalna
M. Boucherta
M. Mattalah
H. O. Chahdi
N. E. Bourzgui
A. Soltani
format Journal article
container_title IEEE Transactions on Electron Devices
container_volume 67
container_issue 5
container_start_page 1924
publishDate 2020
institution Swansea University
issn 0018-9383
1557-9646
doi_str_mv 10.1109/ted.2020.2980329
publisher Institute of Electrical and Electronics Engineers (IEEE)
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN HEMTs under a normal device operation: self-heating and charge trapping. A unique approach that investigates charge trapping using both source (I_S) and drain (I_D) transient currents for the first time. Two types of charge trapping mechanisms are identified: (i) bulk charge trapping occurring on a time scale of less than 1 ms, followed by (ii) surface charge trapping with a time constant larger than a millisecond. Through monitoring the difference between I_S and I_D, a bulk charge trapping time constant is found to be independent of both drain (V_DS) and gate (V_GS) biases. Surface charge trapping is found to have a much greater impact on a slow degradation when compared to bulk trapping and self-heating. At a short timescale (<1 ms), the RF performance is mainly restricted by both bulk charge trapping and self-heating effects. However, at a longer time (>1 ms), the dynamic ON resistance degradation is predominantly limited by surface charge trapping.
published_date 2020-05-01T04:07:20Z
_version_ 1763753528499634176
score 11.037319

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