Journal article 1473 views
Operational frequency degradation induced trapping in scaled GaN HEMTs
Brendan Ubochi,
Soroush Faramehr,
Khaled Ahmeda,
Petar Igić,
Karol Kalna 
Microelectronics Reliability, Volume: 71, Pages: 35 - 40
Swansea University Author:
Karol Kalna
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1016/j.microrel.2017.02.008
Abstract
Cut-off frequency increase from 12.1 GHz to 26.4 GHz, 52.1 GHz and 91.4 GHz is observed when the 1 μm gate length GaN HEMT is laterally scaled down to LG = 0.5 μm, LG = 0.25 μm and LG = 0.125 μm, respectively. The study is based on accurately calibrated transfer characteristics (ID-VGS) of the 1 μm...
| Published in: | Microelectronics Reliability |
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| ISSN: | 0026-2714 |
| Published: |
2017
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa32025 |
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| Abstract: |
Cut-off frequency increase from 12.1 GHz to 26.4 GHz, 52.1 GHz and 91.4 GHz is observed when the 1 μm gate length GaN HEMT is laterally scaled down to LG = 0.5 μm, LG = 0.25 μm and LG = 0.125 μm, respectively. The study is based on accurately calibrated transfer characteristics (ID-VGS) of the 1 μm gate length device using Silvaco TCAD. If the scaling is also performed horizontally, proportionally to the lateral (full scaling), the maximum drain current is reduced by 38.2% when the gate-to-channel separation scales from 33 nm to 8.25 nm. Degradation of the RF performance of a GaN HEMT due to the electric field induced acceptor traps experienced under a high electrical stress is found to be about 8% for 1 μm gate length device. The degradation of scaled HEMTs reduces to 3.5% and 7.3% for the 0.25 μm and 0.125 gate length devices, respectively. The traps at energy level of ET = EV + 0.9 eV (carbon) with concentrations of NIT = 5 × 1016cm− 3, NIT = 5 × 1017cm− 3 and NIT = 5 × 1018cm− 3 are located in the drain access region where highest electrical field is expected. The effect of traps on the cut-off frequency is reduced for devices with shorter gate lengths down to 0.125 μm. |
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| Keywords: |
GaN HEMTs; Traps; Degradation; Radio frequency; Device modelling |
| College: |
Faculty of Science and Engineering |
| Start Page: |
35 |
| End Page: |
40 |