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Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor

B. Thorpe, Karol Kalna Orcid Logo, F. C. Langbein, Sophie Shermer Orcid Logo

Journal of Applied Physics, Volume: 122, Issue: 22, Start page: 223903

Swansea University Authors: Karol Kalna Orcid Logo, Sophie Shermer Orcid Logo

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DOI (Published version): 10.1063/1.4994148

Published in: Journal of Applied Physics
ISSN: 0021-8979 1089-7550
Published: AIP Publishing 2017
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URI: https://cronfa.swan.ac.uk/Record/cronfa37408
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first_indexed 2017-12-12T13:49:51Z
last_indexed 2020-07-28T12:56:25Z
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spelling 2020-07-28T12:54:48.8946723 v2 37408 2017-12-11 Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 6ebef22eb31eafc75aedcf5bfe487777 0000-0002-5530-7750 Sophie Shermer Sophie Shermer true false 2017-12-11 EEEG Journal Article Journal of Applied Physics 122 22 223903 AIP Publishing 0021-8979 1089-7550 spintronics, nanoscale device modelling, Monte Carlo simulations 14 12 2017 2017-12-14 10.1063/1.4994148 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University Ser Cymru NRN 2020-07-28T12:54:48.8946723 2017-12-11T22:41:14.2784554 Faculty of Science and Engineering School of Biosciences, Geography and Physics - Physics B. Thorpe 1 Karol Kalna 0000-0002-6333-9189 2 F. C. Langbein 3 Sophie Shermer 0000-0002-5530-7750 4 0037408-11122017224527.pdf 1610.04114.pdf 2017-12-11T22:45:27.1970000 Output 2994017 application/pdf Accepted Manuscript true 2018-12-11T00:00:00.0000000 true eng
title Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor
spellingShingle Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor
Karol Kalna
Sophie Shermer
title_short Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor
title_full Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor
title_fullStr Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor
title_full_unstemmed Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor
title_sort Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
6ebef22eb31eafc75aedcf5bfe487777
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
6ebef22eb31eafc75aedcf5bfe487777_***_Sophie Shermer
author Karol Kalna
Sophie Shermer
author2 B. Thorpe
Karol Kalna
F. C. Langbein
Sophie Shermer
format Journal article
container_title Journal of Applied Physics
container_volume 122
container_issue 22
container_start_page 223903
publishDate 2017
institution Swansea University
issn 0021-8979
1089-7550
doi_str_mv 10.1063/1.4994148
publisher AIP Publishing
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Biosciences, Geography and Physics - Physics{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Biosciences, Geography and Physics - Physics
document_store_str 1
active_str 0
published_date 2017-12-14T03:47:07Z
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score 11.013148

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