Journal article 1262 views
3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
Manuel Aldegunde,
Antonio Jesus Garcia-Loureiro,
Karol Kalna 
IEEE Transactions on Electron Devices, Volume: 60, Issue: 5, Pages: 1561 - 1567
Swansea University Author:
Karol Kalna
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1109/ted.2013.2253465
Abstract
3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors
| Published in: | IEEE Transactions on Electron Devices |
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| ISSN: | 0018-9383 1557-9646 |
| Published: |
2013
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa14745 |
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| Item Description: |
The first Finite Element ensemble Monte Carlo simulation toolbox with quantum corrections was developed showing an excellent agreement with experimental I-V characteristics for the 25 nm gate length SOI Si FinFET. This opens a new horizon for physically based state-of-the art TCAD simulations of nanoscale device for future digital, RF, and sensing applications with a predictive power. The work resulted from my 5-year EPSRC Advanced Research Fellowship and a 3-year EPSRC grant on modelling of metal-semiconductor interfaces. |
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| College: |
Faculty of Science and Engineering |
| Issue: |
5 |
| Start Page: |
1561 |
| End Page: |
1567 |