Conference Paper/Proceeding/Abstract 1019 views
3D Monte Carlo simulation of Tri-Gate MOSFETs using tetrahedral finite elements
Manuel Aldegunde,
Antonio J Garcia-Loureiro,
Antonio Martinez,
Karol Kalna 
Pages: 153 - 156
Swansea University Author:
Karol Kalna
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DOI (Published version): 10.1109/sispad.2008.4648260
Abstract
3D Monte Carlo simulation of Tri-Gate MOSFETs using tetrahedral finite elements
| Published: |
2008
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa14757 |
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| College: |
Faculty of Science and Engineering |
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| Start Page: |
153 |
| End Page: |
156 |