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Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor
Journal of Applied Physics, Volume: 122, Issue: 22, Start page: 223903
Swansea University Authors:
Karol Kalna , Sophie Shermer
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PDF | Accepted Manuscript
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DOI (Published version): 10.1063/1.4994148
Abstract
Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor
| Published in: | Journal of Applied Physics |
|---|---|
| ISSN: | 0021-8979 1089-7550 |
| Published: |
AIP Publishing
2017
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa37408 |
| Keywords: |
spintronics, nanoscale device modelling, Monte Carlo simulations |
|---|---|
| College: |
Faculty of Science and Engineering |
| Issue: |
22 |
| Start Page: |
223903 |

