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Monte Carlo simulations of spin transport in nanoscale$\mathrm{In_{0.7}Ga_{0.3}As}$ transistors: temperature and size effects

Ben Thorpe, SOPHIE SCHIRMER, Karol Kalna Orcid Logo

Semiconductor Science and Technology, Volume: 37, Issue: 7, Start page: 075009

Swansea University Authors: Ben Thorpe, SOPHIE SCHIRMER, Karol Kalna Orcid Logo

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DOI (Published version): 10.1088/1361-6641/ac70f0

Abstract

Spin-based metal-oxide-semiconductor field-effect transistors (MOSFETs) with a high-mobility III-V channel are studied using self-consistent quantum corrected ensemble Monte Carlo device simulations of charge and spin transport. The simulations including spin–orbit coupling mechanisms (Dresselhaus a...

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Published in: Semiconductor Science and Technology
ISSN: 0268-1242 1361-6641
Published: IOP Publishing 2022
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa60258
Abstract: Spin-based metal-oxide-semiconductor field-effect transistors (MOSFETs) with a high-mobility III-V channel are studied using self-consistent quantum corrected ensemble Monte Carlo device simulations of charge and spin transport. The simulations including spin–orbit coupling mechanisms (Dresselhaus and Rashba coupling) examine the electron spin transport in the 25 nm gate length $\mathrm{In_{0.7}Ga_{0.3}As}$ MOSFET. The transistor lateral dimensions (the gate length, the source-to-gate, and the gate-to-drain spacers) are increased to investigate the spin-dependent drain current modulation induced by the gate from room temperature of 300 K down to 77 K. This modulation increases with increasing temperature due to increased Rashba coupling. Finally, an increase of up to 20 nm in the gate length, source-to-gate, or the gate-to-drain spacers increases the spin polarization and enhances the spin-dependent drain current modulation at the drain due to polarization-refocusing effects.
Keywords: InGaAs FET, spin transport, Dresselhaus and Rashba coupling, Monte Carlo simulation
College: Faculty of Science and Engineering
Funders: B T appreciated the support for his studentship, and S S and K K for the research from the Sˆer Cymru National Research Network in Advanced Engineering by Welsh Government.
Issue: 7
Start Page: 075009

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