Journal article 1511 views 178 downloads
Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor
Journal of Applied Physics, Volume: 122, Issue: 22, Start page: 223903
Swansea University Authors: Karol Kalna , Sophie Shermer
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DOI (Published version): 10.1063/1.4994148
Abstract
Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor
Published in: | Journal of Applied Physics |
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ISSN: | 0021-8979 1089-7550 |
Published: |
AIP Publishing
2017
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Online Access: |
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URI: | https://cronfa.swan.ac.uk/Record/cronfa37408 |
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Keywords: |
spintronics, nanoscale device modelling, Monte Carlo simulations |
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College: |
Faculty of Science and Engineering |
Issue: |
22 |
Start Page: |
223903 |