Journal article 1465 views
Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold
G. Indalecio,
N. Seoane,
M. Aldegunde,
K. Kalna,
A. J. García-Loureiro,
Karol Kalna 
Journal of Low Power Electronics, Volume: 11, Issue: 2, Pages: 256 - 262
Swansea University Author:
Karol Kalna
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1166/jolpe.2015.1371
Abstract
Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold
| Published in: | Journal of Low Power Electronics |
|---|---|
| Published: |
2015
|
| URI: | https://cronfa.swan.ac.uk/Record/cronfa25046 |
| College: |
Faculty of Science and Engineering |
|---|---|
| Issue: |
2 |
| Start Page: |
256 |
| End Page: |
262 |