Kalna, K., Indalecio, G., Seoane, N., Aldegunde, M., Kalna, K., & García-Loureiro, A. J. (2015). Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold. Journal of Low Power Electronics, 11(2), pp. 256-262. doi:10.1166/jolpe.2015.1371

Kalna, Karol, G. Indalecio, N. Seoane, M. Aldegunde, K. Kalna, and A. J. García-Loureiro. "Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors At Subthreshold." Journal of Low Power Electronics 11, no. 2 (2015): 256-262.

Kalna, Karol, et al. "Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors At Subthreshold." Journal of Low Power Electronics 11.2 (2015): 256-262.