A Low‐Temperature Batch Process for the Deposition of High‐Quality Conformal Alumina Thin Films for Electronic Applications

Burwell, Gregory; Rejnhard, Klaudia; Evans, Jonathan; Mitchell, Jacob; Grimes, Michael T.; Elwin, Matt; Armin, Ardalan; Meredith, Paul

doi:10.1002/adem.202201901

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A Low‐Temperature Batch Process for the Deposition of High‐Quality Conformal Alumina Thin Films for Electronic Applications

Gregory Burwell

, Klaudia Rejnhard, Jonathan Evans, Jacob Mitchell, Michael T. Grimes, Matt Elwin, Ardalan Armin

, Paul Meredith

Advanced Engineering Materials, Volume: 25, Issue: 12

Swansea University Authors: Gregory Burwell , Klaudia Rejnhard, Jonathan Evans, Jacob Mitchell, Matt Elwin, Ardalan Armin , Paul Meredith

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DOI (Published version): 10.1002/adem.202201901

Abstract

High-quality, alumina thin films are extensively used as dielectrics, passivation layers and barrier layers in electronics and many other applications. However, to achieve optimum stoichiometry and thus performance, the layers are often grown at elevated temperatures (> 200 °C) using techniques s...

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Published in:	Advanced Engineering Materials
ISSN:	1438-1656 1527-2648
Published:	Wiley 2023
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URI:	https://cronfa.swan.ac.uk/Record/cronfa63132
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However, to achieve optimum stoichiometry and thus performance, the layers are often grown at elevated temperatures (> 200 °C) using techniques such as Atomic Layer Deposition (ALD). This is problematic for substrates or structures with low thermal budgets. In this work, alumina thin films were grown on 200 mm silicon substrates employing a versatile deposition method known as Molecular Vapour Deposition (MVD) at low deposition temperatures (35-150 °C). The chemical composition of the resulting films was investigated post-deposition using X-ray Photoelectron Spectroscopy (XPS) and Variable Angle Spectroscopic Ellipsometry (VASE), with fully stoichiometric Al2O3 achieved at deposition temperatures as low as 100 °C. Dielectric measurements confirm outstanding dielectric properties compared to typical thermal ALD layers deposited at much higher temperatures. We rationalise and understand this low-temperature deposition performance by considering the MVD reactor design and the ‘pump-type’ regime of precursor delivery versus the ‘flow-type’ regime of ALD. Our results clearly demonstrate that alumina thin films grown with MVD are highly versatile for electronic applications and are of particular relevance and interest for the high-volume processing of dielectric, passivation, and barrier layers at low temperatures.</abstract><type>Journal Article</type><journal>Advanced Engineering Materials</journal><volume>25</volume><journalNumber>12</journalNumber><paginationStart/><paginationEnd/><publisher>Wiley</publisher><placeOfPublication/><isbnPrint/><isbnElectronic/><issnPrint>1438-1656</issnPrint><issnElectronic>1527-2648</issnElectronic><keywords>Atomic Layer Deposition, Molecular Vapour Deposition, Alumina, Flexible</keywords><publishedDay>30</publishedDay><publishedMonth>6</publishedMonth><publishedYear>2023</publishedYear><publishedDate>2023-06-30</publishedDate><doi>10.1002/adem.202201901</doi><url>http://dx.doi.org/10.1002/adem.202201901</url><notes/><college>COLLEGE NANME</college><department>Physics</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>SPH</DepartmentCode><institution>Swansea University</institution><apcterm>SU Library paid the OA fee (TA Institutional Deal)</apcterm><funders>This work was supported by the Avenues of Commercialisation for Nano & Micro Technologies (ACNM) through the Welsh European Funding Office. 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spelling	v2 63132 2023-04-12 A Low‐Temperature Batch Process for the Deposition of High‐Quality Conformal Alumina Thin Films for Electronic Applications 49890fbfbe127d4ae94bc10dc2b24199 0000-0002-2534-9626 Gregory Burwell Gregory Burwell true false 8cd356436235507d592fc26e3faac5f5 Klaudia Rejnhard Klaudia Rejnhard true false 3a4152e0539a5ba25b3bbb9f76033cf7 Jonathan Evans Jonathan Evans true false 522a9b94c350f5977584e0fd942facdc Jacob Mitchell Jacob Mitchell true false 00349f08581badf257e50e6ec42c5cc0 Matt Elwin Matt Elwin true false 22b270622d739d81e131bec7a819e2fd 0000-0002-6129-5354 Ardalan Armin Ardalan Armin true false 31e8fe57fa180d418afd48c3af280c2e 0000-0002-9049-7414 Paul Meredith Paul Meredith true false 2023-04-12 SPH High-quality, alumina thin films are extensively used as dielectrics, passivation layers and barrier layers in electronics and many other applications. However, to achieve optimum stoichiometry and thus performance, the layers are often grown at elevated temperatures (> 200 °C) using techniques such as Atomic Layer Deposition (ALD). This is problematic for substrates or structures with low thermal budgets. In this work, alumina thin films were grown on 200 mm silicon substrates employing a versatile deposition method known as Molecular Vapour Deposition (MVD) at low deposition temperatures (35-150 °C). The chemical composition of the resulting films was investigated post-deposition using X-ray Photoelectron Spectroscopy (XPS) and Variable Angle Spectroscopic Ellipsometry (VASE), with fully stoichiometric Al2O3 achieved at deposition temperatures as low as 100 °C. Dielectric measurements confirm outstanding dielectric properties compared to typical thermal ALD layers deposited at much higher temperatures. We rationalise and understand this low-temperature deposition performance by considering the MVD reactor design and the ‘pump-type’ regime of precursor delivery versus the ‘flow-type’ regime of ALD. Our results clearly demonstrate that alumina thin films grown with MVD are highly versatile for electronic applications and are of particular relevance and interest for the high-volume processing of dielectric, passivation, and barrier layers at low temperatures. Journal Article Advanced Engineering Materials 25 12 Wiley 1438-1656 1527-2648 Atomic Layer Deposition, Molecular Vapour Deposition, Alumina, Flexible 30 6 2023 2023-06-30 10.1002/adem.202201901 http://dx.doi.org/10.1002/adem.202201901 COLLEGE NANME Physics COLLEGE CODE SPH Swansea University SU Library paid the OA fee (TA Institutional Deal) This work was supported by the Avenues of Commercialisation for Nano & Micro Technologies (ACNM) through the Welsh European Funding Office. This work was further supported by the Welsh Government's Sêr Cymru II Rising Star and Capacity Builder Accelerator Programs through the European Regional Development Fund, Welsh European Funding Office, and Swansea University Strategic Initiative in Sustainable Advanced Materials. 81853, 80761-SU-64 2023-08-07T15:45:56.7320038 2023-04-12T14:09:04.2020906 Faculty of Science and Engineering School of Biosciences, Geography and Physics - Physics Gregory Burwell 0000-0002-2534-9626 1 Klaudia Rejnhard 2 Jonathan Evans 3 Jacob Mitchell 4 Michael T. Grimes 5 Matt Elwin 6 Ardalan Armin 0000-0002-6129-5354 7 Paul Meredith 0000-0002-9049-7414 8 63132__27421__5edd85ea4f9b429592ba2621c7f2901d.pdf 63132].pdf 2023-05-10T16:40:38.8913862 Output 1200913 application/pdf Version of Record true © 2023 The Authors. Advanced Engineering Materials published by WileyVCH GmbH. Distributed under the terms of a Creative Commons Attribution 4.0 License (CC BY 4.0). true eng http://creativecommons.org/licenses/by/4.0/
title	A Low‐Temperature Batch Process for the Deposition of High‐Quality Conformal Alumina Thin Films for Electronic Applications
spellingShingle	A Low‐Temperature Batch Process for the Deposition of High‐Quality Conformal Alumina Thin Films for Electronic Applications Gregory Burwell Klaudia Rejnhard Jonathan Evans Jacob Mitchell Matt Elwin Ardalan Armin Paul Meredith
title_short	A Low‐Temperature Batch Process for the Deposition of High‐Quality Conformal Alumina Thin Films for Electronic Applications
title_full	A Low‐Temperature Batch Process for the Deposition of High‐Quality Conformal Alumina Thin Films for Electronic Applications
title_fullStr	A Low‐Temperature Batch Process for the Deposition of High‐Quality Conformal Alumina Thin Films for Electronic Applications
title_full_unstemmed	A Low‐Temperature Batch Process for the Deposition of High‐Quality Conformal Alumina Thin Films for Electronic Applications
title_sort	A Low‐Temperature Batch Process for the Deposition of High‐Quality Conformal Alumina Thin Films for Electronic Applications
author_id_str_mv	49890fbfbe127d4ae94bc10dc2b24199 8cd356436235507d592fc26e3faac5f5 3a4152e0539a5ba25b3bbb9f76033cf7 522a9b94c350f5977584e0fd942facdc 00349f08581badf257e50e6ec42c5cc0 22b270622d739d81e131bec7a819e2fd 31e8fe57fa180d418afd48c3af280c2e
author_id_fullname_str_mv	49890fbfbe127d4ae94bc10dc2b24199_*_Gregory Burwell 8cd356436235507d592fc26e3faac5f5__Klaudia Rejnhard 3a4152e0539a5ba25b3bbb9f76033cf7__Jonathan Evans 522a9b94c350f5977584e0fd942facdc__Jacob Mitchell 00349f08581badf257e50e6ec42c5cc0__Matt Elwin 22b270622d739d81e131bec7a819e2fd__Ardalan Armin 31e8fe57fa180d418afd48c3af280c2e_**_Paul Meredith
author	Gregory Burwell Klaudia Rejnhard Jonathan Evans Jacob Mitchell Matt Elwin Ardalan Armin Paul Meredith
author2	Gregory Burwell Klaudia Rejnhard Jonathan Evans Jacob Mitchell Michael T. Grimes Matt Elwin Ardalan Armin Paul Meredith
format	Journal article
container_title	Advanced Engineering Materials
container_volume	25
container_issue	12
publishDate	2023
institution	Swansea University
issn	1438-1656 1527-2648
doi_str_mv	10.1002/adem.202201901
publisher	Wiley
college_str	Faculty of Science and Engineering
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hierarchy_top_id	facultyofscienceandengineering
hierarchy_top_title	Faculty of Science and Engineering
hierarchy_parent_id	facultyofscienceandengineering
hierarchy_parent_title	Faculty of Science and Engineering
department_str	School of Biosciences, Geography and Physics - Physics{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Biosciences, Geography and Physics - Physics
url	http://dx.doi.org/10.1002/adem.202201901
document_store_str	1
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description	High-quality, alumina thin films are extensively used as dielectrics, passivation layers and barrier layers in electronics and many other applications. However, to achieve optimum stoichiometry and thus performance, the layers are often grown at elevated temperatures (> 200 °C) using techniques such as Atomic Layer Deposition (ALD). This is problematic for substrates or structures with low thermal budgets. In this work, alumina thin films were grown on 200 mm silicon substrates employing a versatile deposition method known as Molecular Vapour Deposition (MVD) at low deposition temperatures (35-150 °C). The chemical composition of the resulting films was investigated post-deposition using X-ray Photoelectron Spectroscopy (XPS) and Variable Angle Spectroscopic Ellipsometry (VASE), with fully stoichiometric Al2O3 achieved at deposition temperatures as low as 100 °C. Dielectric measurements confirm outstanding dielectric properties compared to typical thermal ALD layers deposited at much higher temperatures. We rationalise and understand this low-temperature deposition performance by considering the MVD reactor design and the ‘pump-type’ regime of precursor delivery versus the ‘flow-type’ regime of ALD. Our results clearly demonstrate that alumina thin films grown with MVD are highly versatile for electronic applications and are of particular relevance and interest for the high-volume processing of dielectric, passivation, and barrier layers at low temperatures.
published_date	2023-06-30T15:45:52Z
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score	11.013082

A Low‐Temperature Batch Process for the Deposition of High‐Quality Conformal Alumina Thin Films for Electronic Applications

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