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Surface defects in semiconductor lasers studied with cross-sectional scanning tunneling microscopy

Richard Cobley Orcid Logo, Steve Wilks, Vincent Teng Orcid Logo, Rowan Brown Orcid Logo, Paul Rees Orcid Logo

Applied Surface Science, Volume: 256, Issue: 19, Start page: 5736

Swansea University Authors: Richard Cobley Orcid Logo, Steve Wilks, Vincent Teng Orcid Logo, Rowan Brown Orcid Logo, Paul Rees Orcid Logo

DOI (Published version): 10.1016/j.apsusc.2010.03.089

Abstract

<p>Cross-sectional scanning tunneling microscopy is used to study defects on the surface of semiconductor laser devices. Step defects across the active region caused by the cleave process are identified. Curved blocking layers used in buried heterostructure lasers are shown to induce strain in...

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Published in: Applied Surface Science
Published: 2010
URI: https://cronfa.swan.ac.uk/Record/cronfa5734
first_indexed 2013-07-23T11:53:34Z
last_indexed 2019-05-31T21:25:30Z
id cronfa5734
recordtype SURis
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Step defects across the active region caused by the cleave process are identified. Curved blocking layers used in buried heterostructure lasers are shown to induce strain in the layers above them. Devices are also studied whilst powered to look at how the devices change during operation, with a numerical model that confirms the observed behavior. Whilst powered, low-doped blocking layers adjacent to the active region are found to change in real time, with dopant diffusion and the formation of surface states. A tunneling model which allows the inclusion of surface states and tip-induced band bending is applied to analyze the effects on the tunneling current, confirming that the doping concentration is reducing and defect surface states are being formed.&lt;/p&gt;</abstract><type>Journal Article</type><journal>Applied Surface Science</journal><volume>256</volume><journalNumber>19</journalNumber><paginationStart>5736</paginationStart><publisher/><keywords>Scanning tunneling microscopy (STM); Semiconductor laser; Passivation; AlGaAs; InP</keywords><publishedDay>25</publishedDay><publishedMonth>3</publishedMonth><publishedYear>2010</publishedYear><publishedDate>2010-03-25</publishedDate><doi>10.1016/j.apsusc.2010.03.089</doi><url/><notes>This paper develops an experimental method to study semiconductor laser diodes while active, with corresponding modelling. It is the only combined experimental and modelling work to use STM to study local nanoscale changes on operating optoelectronic devices. 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spelling 2019-05-31T14:16:21.6376150 v2 5734 2013-09-03 Surface defects in semiconductor lasers studied with cross-sectional scanning tunneling microscopy 2ce7e1dd9006164425415a35fa452494 0000-0003-4833-8492 Richard Cobley Richard Cobley true false 948a547e27d969b7e192b4620688704d Steve Wilks Steve Wilks true false 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false d7db8d42c476dfa69c15ce06d29bd863 0000-0003-3628-2524 Rowan Brown Rowan Brown true false 537a2fe031a796a3bde99679ee8c24f5 0000-0002-7715-6914 Paul Rees Paul Rees true false 2013-09-03 ACEM <p>Cross-sectional scanning tunneling microscopy is used to study defects on the surface of semiconductor laser devices. Step defects across the active region caused by the cleave process are identified. Curved blocking layers used in buried heterostructure lasers are shown to induce strain in the layers above them. Devices are also studied whilst powered to look at how the devices change during operation, with a numerical model that confirms the observed behavior. Whilst powered, low-doped blocking layers adjacent to the active region are found to change in real time, with dopant diffusion and the formation of surface states. A tunneling model which allows the inclusion of surface states and tip-induced band bending is applied to analyze the effects on the tunneling current, confirming that the doping concentration is reducing and defect surface states are being formed.</p> Journal Article Applied Surface Science 256 19 5736 Scanning tunneling microscopy (STM); Semiconductor laser; Passivation; AlGaAs; InP 25 3 2010 2010-03-25 10.1016/j.apsusc.2010.03.089 This paper develops an experimental method to study semiconductor laser diodes while active, with corresponding modelling. It is the only combined experimental and modelling work to use STM to study local nanoscale changes on operating optoelectronic devices. This work comes out of the authors' RAEng/EPSRC research fellowship, and has lead to a collaborative project between Swansea and Sheffield to submit an EPSRC proposal to continue the work on the development of Quantum Cascade Lasers. COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University 2019-05-31T14:16:21.6376150 2013-09-03T06:19:14.0000000 Faculty of Science and Engineering School of Engineering and Applied Sciences - Uncategorised Richard Cobley 0000-0003-4833-8492 1 Steve Wilks 2 Vincent Teng 0000-0003-4325-8573 3 Rowan Brown 0000-0003-3628-2524 4 Paul Rees 0000-0002-7715-6914 5 0005734-22062015154201.pdf Surface__defects__in__semiconductor__lasers__studied__with__cross-sectional__scanning__tunneling__microscopy__-__Pre-print.pdf 2015-06-22T15:42:01.5330000 Output 665349 application/pdf Submitted Manuscript Under Review true 2015-06-22T00:00:00.0000000 true
title Surface defects in semiconductor lasers studied with cross-sectional scanning tunneling microscopy
spellingShingle Surface defects in semiconductor lasers studied with cross-sectional scanning tunneling microscopy
Richard Cobley
Steve Wilks
Vincent Teng
Rowan Brown
Paul Rees
title_short Surface defects in semiconductor lasers studied with cross-sectional scanning tunneling microscopy
title_full Surface defects in semiconductor lasers studied with cross-sectional scanning tunneling microscopy
title_fullStr Surface defects in semiconductor lasers studied with cross-sectional scanning tunneling microscopy
title_full_unstemmed Surface defects in semiconductor lasers studied with cross-sectional scanning tunneling microscopy
title_sort Surface defects in semiconductor lasers studied with cross-sectional scanning tunneling microscopy
author_id_str_mv 2ce7e1dd9006164425415a35fa452494
948a547e27d969b7e192b4620688704d
98f529f56798da1ba3e6e93d2817c114
d7db8d42c476dfa69c15ce06d29bd863
537a2fe031a796a3bde99679ee8c24f5
author_id_fullname_str_mv 2ce7e1dd9006164425415a35fa452494_***_Richard Cobley
948a547e27d969b7e192b4620688704d_***_Steve Wilks
98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
d7db8d42c476dfa69c15ce06d29bd863_***_Rowan Brown
537a2fe031a796a3bde99679ee8c24f5_***_Paul Rees
author Richard Cobley
Steve Wilks
Vincent Teng
Rowan Brown
Paul Rees
author2 Richard Cobley
Steve Wilks
Vincent Teng
Rowan Brown
Paul Rees
format Journal article
container_title Applied Surface Science
container_volume 256
container_issue 19
container_start_page 5736
publishDate 2010
institution Swansea University
doi_str_mv 10.1016/j.apsusc.2010.03.089
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Uncategorised{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Uncategorised
document_store_str 1
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description <p>Cross-sectional scanning tunneling microscopy is used to study defects on the surface of semiconductor laser devices. Step defects across the active region caused by the cleave process are identified. Curved blocking layers used in buried heterostructure lasers are shown to induce strain in the layers above them. Devices are also studied whilst powered to look at how the devices change during operation, with a numerical model that confirms the observed behavior. Whilst powered, low-doped blocking layers adjacent to the active region are found to change in real time, with dopant diffusion and the formation of surface states. A tunneling model which allows the inclusion of surface states and tip-induced band bending is applied to analyze the effects on the tunneling current, confirming that the doping concentration is reducing and defect surface states are being formed.</p>
published_date 2010-03-25T00:12:23Z
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score 11.04748

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