Journal article 883 views 163 downloads
Monte Carlo Simulations of Electron Transport Characteristics of Ternary Carbide Al4SiC4
Simon Forster,
Didier Chaussende,
Karol Kalna 
ACS Applied Energy Materials, Volume: 2, Issue: 1, Pages: 715 - 720
Swansea University Author:
Karol Kalna
-
PDF | Version of Record
Download (10.24MB)
DOI (Published version): 10.1021/acsaem.8b01767
Abstract
Electron transport characteristics of a novel wide band gap ternary carbide, Al4SiC4, to be used for efficient power and optoelectronic applications, are predicted using ensemble Monte Carlo (MC) simulations. The MC simulations use a mixture of material parameters obtained from density functional th...
| Published in: | ACS Applied Energy Materials |
|---|---|
| ISSN: | 2574-0962 2574-0962 |
| Published: |
2019
|
| Online Access: |
Check full text
|
| URI: | https://cronfa.swan.ac.uk/Record/cronfa50391 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Abstract: |
Electron transport characteristics of a novel wide band gap ternary carbide, Al4SiC4, to be used for efficient power and optoelectronic applications, are predicted using ensemble Monte Carlo (MC) simulations. The MC simulations use a mixture of material parameters obtained from density functional theory (DFT) calculations and experiment, with a preference for the experimental data if they are known. The DFT calculations predict a band gap of 2.48 eV, while the experimental measurements give a band gap between 2.78 and 2.8 eV. We have found that the electron effective mass in the two lowest valleys (M and K) is highly anisotropic; in the K valley, mt* = 0.5678 me and ml* = 0.6952 me, and for the M valley, mt* = 0.9360 me and ml* = 1.0569 me. We simulate electron drift velocity and electron mobility as a function of applied electric field as well as electron mobility as a function of doping concentration in Al4SiC4. We predict a peak electron drift velocity of 1.35 × 107 cm s–1 at an electric field of 1400 kV cm–1 and a maximum electron mobility of 82.9 cm2 V–1 s–1. We have seen diffusion constants of 2.14 cm2 s–1 at a low electric field and 0.25 cm2 s–1 at a high electric field. Finally, we show that Al4SiC4 has a critical field of 1831 kV cm–1. |
|---|---|
| Keywords: |
Al4SiC4; breakdown; effective mass; electron transport; ensemble Monte Carlo; ternary carbide |
| College: |
Faculty of Science and Engineering |
| Issue: |
1 |
| Start Page: |
715 |
| End Page: |
720 |