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Effective Bandstructure Model for Monte Carlo Simulations of Electron and Hole Transport in Germanium
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Shuqiao Cai ,
Murad Alabdullah ,
Karol Kalna
ECS Journal of Solid State Science and Technology, Volume: 14, Issue: 7, Start page: 073007
Swansea University Author:
Karol Kalna
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DOI (Published version): 10.1149/2162-8777/adedb7
Abstract
A simple yet highly effective band structure model of germanium (Ge) for electron and hole transport in bulk semiconductor is developed for Monte Carlo (MC) simulations at 300 K. The simulated electron and hole drift velocities versus the applied electric field are compared with experimental data, s...
| Published in: | ECS Journal of Solid State Science and Technology |
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| ISSN: | 2162-8769 2162-8777 |
| Published: |
The Electrochemical Society
2025
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa70036 |
| Abstract: |
A simple yet highly effective band structure model of germanium (Ge) for electron and hole transport in bulk semiconductor is developed for Monte Carlo (MC) simulations at 300 K. The simulated electron and hole drift velocities versus the applied electric field are compared with experimental data, serving as a reference for model accuracy. The comparison between the experimental and simulation results, up to an electric field of 700 kV cm−1 for electrons and up to 10 kV cm−1 for holes in the Ge 〈100〉 crystallographic orientation, demonstrates exceptionally good agreement, especially for holes, when compared to previous works. We have found that electron/hole effective masses in the lowest valley (the L-valley)/band (the heavy-band) are highly anisotropic with longitudinal and transverse masses of 1.588/1.64 and 0.082/0.052, respectively. The electron and hole mobilities as a function of ionised impurity concentration are also obtained using a static screening model in carrier scattering with ionised impurities. Finally, the relaxation times and the occupation of valleys in the conduction and valence bands are shown as a function of the applied electric field. |
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| College: |
Faculty of Science and Engineering |
| Issue: |
7 |
| Start Page: |
073007 |