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The electronic passivation properties of Si nanoislands on GaAs(110) step defects induced by cleaving

K. S Teng, P. R Dunstan, S. P Wilks, R. H Williams, Vincent Teng Orcid Logo

Applied Physics Letters, Volume: 75, Issue: 17, Start page: 2590

Swansea University Author: Vincent Teng Orcid Logo

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DOI (Published version): 10.1063/1.125087

Published in: Applied Physics Letters
ISSN: 0003-6951
Published: 1999
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URI: https://cronfa.swan.ac.uk/Record/cronfa12726
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first_indexed 2013-07-23T12:08:39Z
last_indexed 2018-02-09T04:42:57Z
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spelling 2011-10-01T00:00:00.0000000 v2 12726 2012-09-18 The electronic passivation properties of Si nanoislands on GaAs(110) step defects induced by cleaving 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2012-09-18 EEEG Journal Article Applied Physics Letters 75 17 2590 0003-6951 31 12 1999 1999-12-31 10.1063/1.125087 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2011-10-01T00:00:00.0000000 2012-09-18T13:02:32.0058939 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering K. S Teng 1 P. R Dunstan 2 S. P Wilks 3 R. H Williams 4 Vincent Teng 0000-0003-4325-8573 5
title The electronic passivation properties of Si nanoislands on GaAs(110) step defects induced by cleaving
spellingShingle The electronic passivation properties of Si nanoislands on GaAs(110) step defects induced by cleaving
Vincent Teng
title_short The electronic passivation properties of Si nanoislands on GaAs(110) step defects induced by cleaving
title_full The electronic passivation properties of Si nanoislands on GaAs(110) step defects induced by cleaving
title_fullStr The electronic passivation properties of Si nanoislands on GaAs(110) step defects induced by cleaving
title_full_unstemmed The electronic passivation properties of Si nanoislands on GaAs(110) step defects induced by cleaving
title_sort The electronic passivation properties of Si nanoislands on GaAs(110) step defects induced by cleaving
author_id_str_mv 98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv 98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author Vincent Teng
author2 K. S Teng
P. R Dunstan
S. P Wilks
R. H Williams
Vincent Teng
format Journal article
container_title Applied Physics Letters
container_volume 75
container_issue 17
container_start_page 2590
publishDate 1999
institution Swansea University
issn 0003-6951
doi_str_mv 10.1063/1.125087
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 1999-12-31T03:14:38Z
_version_ 1763750212441997312
score 11.037056

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