Teng, V., Teng, K. S., Dunstan, P. R., Wilks, S. P., & Williams, R. H. (1999). The electronic passivation properties of Si nanoislands on GaAs(110) step defects induced by cleaving. Applied Physics Letters, 75(17), p. 2590. doi:10.1063/1.125087

Teng, Vincent, K. S. Teng, P. R. Dunstan, S. P. Wilks, and R. H. Williams. "The Electronic Passivation Properties of Si Nanoislands On GaAs(110) Step Defects Induced By Cleaving." Applied Physics Letters 75, no. 17 (1999): 2590.

Teng, Vincent, et al. "The Electronic Passivation Properties of Si Nanoislands On GaAs(110) Step Defects Induced By Cleaving." Applied Physics Letters 75.17 (1999): 2590.