Journal article 1198 views
The electronic passivation properties of Si nanoislands on GaAs(110) step defects induced by cleaving
K. S Teng,
P. R Dunstan,
S. P Wilks,
R. H Williams,
Vincent Teng 
Applied Physics Letters, Volume: 75, Issue: 17, Start page: 2590
Swansea University Author:
Vincent Teng
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1063/1.125087
Abstract
The electronic passivation properties of Si nanoislands on GaAs(110) step defects induced by cleaving
| Published in: | Applied Physics Letters |
|---|---|
| ISSN: | 0003-6951 |
| Published: |
1999
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa12726 |
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| College: |
Faculty of Science and Engineering |
|---|---|
| Issue: |
17 |
| Start Page: |
2590 |