Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide / Chen Chen, Francesca Adams, Menno J. Kappers, David J. Wallis, Rachel A. Oliver

Swansea University Author: Saptarsi Ghosh
Published in Ultramicroscopy (2023)

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Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence / K. Loeto, G. Kusch, M.J. Kappers, R.A. Oliver

Swansea University Author: Saptarsi Ghosh
Published in Micron (2023)

Compositional Mapping of the AlGaN Alloy Composition in Graded Buffer Structures Using Cathodoluminescence / Kagiso Loeto, Gunnar Kusch, Martin Frentrup, Alexander Hinz, Rachel Oliver

Swansea University Author: Saptarsi Ghosh
Published in physica status solidi (a) (2023)

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Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD / Alexander M Hinz, Martin Frentrup, Saiful Alam, David J Wallis, Rachel A Oliver

Swansea University Author: Saptarsi Ghosh
Published in Semiconductor Science and Technology (2023)

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Microstructure and reflectance of porous GaN distributed Bragg reflectors on silicon substrates / M. Sarkar, M. Frentrup, M. J. Kappers, R. A. Oliver

Swansea University Author: Saptarsi Ghosh
Published in Journal of Applied Physics (2024)

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Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy / Chen Chen, Peter De Wolf, Zhida Liang, Francesca Adams, Menno J. Kappers, et al

Swansea University Author: Saptarsi Ghosh
Published in Applied Physics Letters (2024)

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Complications in silane-assisted GaN nanowire growth / Nian Jiang, Martin Frentrup, Simon M. Fairclough, Kagiso Loeto, Gunnar Kusch, et al

Swansea University Author: Saptarsi Ghosh
Published in Nanoscale Advances (2023)

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Strategy for reliable growth of thin GaN Caps on AlGaN HEMT structures / Alexander M. Hinz, Simon M. Fairclough, James T. Griffiths, Menno J. Kappers, Rachel A. Oliver, et al

Swansea University Author: Saptarsi Ghosh
Published in Journal of Crystal Growth (2023)

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Influence of Xe+ and Ga+ milling species on the cathodoluminescence of wurtzite and zincblende GaN / K. Loeto, S. M. Fairclough, I. Griffiths, G. Kusch, M. J. Kappers, et al

Swansea University Author: Saptarsi Ghosh
Published in Journal of Applied Physics (2024)

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Magnetic properties of nickel electrodeposited on porous GaN substrates with infiltrated and laminated connectivity / Yana Grishchenko, Josh Dawson, Abhiram Gundimeda, Bogdan F. Spiridon, Nivedita L. Raveendran, et al

Swansea University Author: Saptarsi Ghosh
Published in Journal of Magnetism and Magnetic Materials (2023)

Fabrication and transfer printing based integration of free-standing GaN membrane micro-lenses onto semiconductor chips / Nils Kolja Wessling, Benoit Guilhabert, Menno Kappers, Alexander M. Hinz, Miles Toon, et al

Swansea University Author: Saptarsi Ghosh
Published in Optical Materials Express (2022)

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Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon / Alexander Hinz, Simon M. Fairclough, Bogdan F. Spiridon, Abdalla Eblabla, Michael A. Casbon, et al

Swansea University Author: Saptarsi Ghosh
Published in ACS Applied Electronic Materials (2021)

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Room temperature quantum emitters in aluminum nitride epilayers on silicon / Joseph K. Cannon, Sam G. Bishop, Katie M. Eggleton, Huseyin B. Yağcı, Rachel N. Clark, et al

Swansea University Author: Saptarsi Ghosh
Published in Applied Physics Letters (2024)

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Sub-surface Imaging of Porous GaN Distributed Bragg Reflectors via Backscattered Electrons / Maruf Sarkar, Francesca Adams, Sidra A Dar, Jordan Penn, Yihong Ji, et al

Swansea University Author: Saptarsi Ghosh
Published in Microscopy and Microanalysis (2024)

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Additive GaN Solid Immersion Lenses for Enhanced Photon Extraction Efficiency from Diamond Color Centers / Xingrui Cheng, Nils Kolja Wessling, Andrew R. Kirkpatrick, Menno J. Kappers, Yashna N. D. Lekhai, et al

Swansea University Author: Saptarsi Ghosh
Published in ACS Photonics (2023)

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Advanced transfer printing with in-situ optical monitoring for the integration of micron-scale devices / Benoit Guilhabert, Sean P. Bommer, Nils K. Wessling, Dimitars Jevtics, Jack A. Smith, et al

Swansea University Author: Saptarsi Ghosh
Published in IEEE Journal of Selected Topics in Quantum Electronics (2022)

Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis / B. F. Spiridon, M. Toon, A. Hinz, S. M. Fairclough, B. J. E. Guilhabert, et al

Swansea University Author: Saptarsi Ghosh
Published in Optical Materials Express (2021)

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