Journal article 41 views 11 downloads
Room temperature quantum emitters in aluminum nitride epilayers on silicon
,
Sam G. Bishop ,
Katie M. Eggleton ,
Huseyin B. Yağcı ,
Rachel N. Clark ,
Sherif R. Ibrahim ,
John P. Hadden ,
Saptarsi Ghosh ,
Menno J. Kappers ,
Rachel A. Oliver ,
Anthony J. Bennett
Applied Physics Letters, Volume: 124, Issue: 24
Swansea University Author:
Saptarsi Ghosh
-
PDF | Version of Record
2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution-NonCommercialNoDerivs 4.0 International (CC BY-NC-ND) license.
Download (2.54MB)
DOI (Published version): 10.1063/5.0207744
Abstract
Room temperature quantum emitters have been reported in aluminum nitride grown on sapphire, but until now they have not been observed in epilayers grown on silicon. We report that epitaxial aluminum nitride grown on silicon by either plasma vapor deposition or metal-organic vapor phase epitaxy conta...
| Published in: | Applied Physics Letters |
|---|---|
| ISSN: | 0003-6951 1077-3118 |
| Published: |
AIP Publishing
2024
|
| Online Access: |
Check full text
|
| URI: | https://cronfa.swan.ac.uk/Record/cronfa66863 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Abstract: |
Room temperature quantum emitters have been reported in aluminum nitride grown on sapphire, but until now they have not been observed in epilayers grown on silicon. We report that epitaxial aluminum nitride grown on silicon by either plasma vapor deposition or metal-organic vapor phase epitaxy contains point-like emitters in the red to near-infrared part of the spectrum. We study the photon statistics and polarization of emission at a wavelength of 700–750 nm, showing signatures of quantized electronic states under pulsed and CW optical excitation. The discovery of quantum emitters in a material deposited directly on silicon can drive integration using industry standard 300 mm wafers, established complementary metal-oxide-semiconductor control electronics, and low marginal-cost mass-manufacturing. |
|---|---|
| College: |
Faculty of Science and Engineering |
| Funders: |
We acknowledge financial support provided by EPSRC via Grant Nos. EP/T017813/1, EP/03982X/1, and EP/X015300/1 and the European Union’s H2020 Marie Curie ITN project LasIonDef (Grant No. 956387). RC was supported by Grant No. EP/S024441/1, Cardiff University and the National Physical Laboratory. We thank Ceri Thorne for proof reading. |
| Issue: |
24 |