Journal article 173 views
Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence
K. Loeto,
G. Kusch,
Saptarsi Ghosh 
,
M.J. Kappers,
R.A. Oliver
,
M.J. Kappers,
R.A. Oliver
Micron, Volume: 172, Start page: 103489
Swansea University Author:
Saptarsi Ghosh
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1016/j.micron.2023.103489
Abstract
Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence
| Published in: | Micron |
|---|---|
| ISSN: | 0968-4328 |
| Published: |
Elsevier BV
2023
|
| Online Access: |
Check full text
|
| URI: | https://cronfa.swan.ac.uk/Record/cronfa66867 |
| Keywords: |
Cathodoluminescence; Carbon doping level; Gallium nitride; High-electron-mobility-transistor |
|---|---|
| College: |
Faculty of Science and Engineering |
| Funders: |
This research was supported by the EPSRC under the grant numbers
EP/X015300/1
,
EP/P00945X/1
and by Cambridge NanoDTC,
EP/S022953/1
. K. Loeto would like to acknowledge the Botswana government for his Ph.D funding. Dr. Christian Monachon of Attolight is thanked for his ongoing support of the system along with Dr. Alexander Hinz who helped with the growth. |
| Start Page: |
103489 |