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Compositional Mapping of the AlGaN Alloy Composition in Graded Buffer Structures Using Cathodoluminescence

Kagiso Loeto Orcid Logo, Gunnar Kusch, Saptarsi Ghosh Orcid Logo, Martin Frentrup, Alexander Hinz, Rachel Oliver

physica status solidi (a), Volume: 220, Issue: 16

Swansea University Author: Saptarsi Ghosh Orcid Logo

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DOI (Published version): 10.1002/pssa.202200830

Abstract

Herein, the use of cathodoluminescence (CL) hyperspectral mapping in the quantification of the AlGaN alloy composition in graded buffer structures is explored. The quantification takes advantage of the known parabolic dependence of the AlGaN bandgap on the alloy composition allowing the AlGaN near-b...

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Published in: physica status solidi (a)
ISSN: 1862-6300 1862-6319
Published: Wiley 2023
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URI: https://cronfa.swan.ac.uk/Record/cronfa66870
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Abstract: Herein, the use of cathodoluminescence (CL) hyperspectral mapping in the quantification of the AlGaN alloy composition in graded buffer structures is explored. The quantification takes advantage of the known parabolic dependence of the AlGaN bandgap on the alloy composition allowing the AlGaN near-band-edge (NBE) emission energy recorded from CL to be converted to a composition. The proposed quantification method is first applied to cleaved cross-sections of two nominally step-graded AlGaN buffer structures each containing five AlGaN layers with different compositions. By comparing the compositions obtained from CL to those calculated using X-ray diffraction, a close agreement between values from both techniques is observed. However, due to a change in the bowing parameter, some deviation is observed for layers with compositions near 75%. The method is then applied to cleaved cross-sections of an AlGaN buffer whose group III precursor flow molar ratio is varied linearly throughout the growth. Herein, the hyperspectral nature of the CL datasets is exploited such as to produce composition maps by converting the relevant AlGaN-NBE emission energy at each pixel of the CL data to a composition.
Keywords: AlGaN buffer structures; cathodoluminescence; high-electron-mobility transistors; III-nitrides
College: Faculty of Science and Engineering
Funders: Engineering and Physical Sciences Research Council. Grant Numbers: EP/N017927/1, EP/S022953/1, EP/N014820/2 Deutsche Forschungsgemeinschaft. Grant Number: HI 2141/1-1
Issue: 16