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Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence

K. Loeto, G. Kusch, Saptarsi Ghosh Orcid Logo, M.J. Kappers, R.A. Oliver

Micron, Volume: 172, Start page: 103489

Swansea University Author: Saptarsi Ghosh Orcid Logo

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DOI (Published version): 10.1016/j.micron.2023.103489

Published in: Micron
ISSN: 0968-4328
Published: Elsevier BV 2023
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URI: https://cronfa.swan.ac.uk/Record/cronfa66867
first_indexed 2024-07-04T16:52:18Z
last_indexed 2024-11-25T14:19:02Z
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spelling 2024-08-15T11:45:59.7348585 v2 66867 2024-06-23 Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence 3e247ecabd6eddd319264d066b0ce959 0000-0003-1685-6228 Saptarsi Ghosh Saptarsi Ghosh true false 2024-06-23 ACEM Journal Article Micron 172 103489 Elsevier BV 0968-4328 Cathodoluminescence; Carbon doping level; Gallium nitride; High-electron-mobility-transistor 1 9 2023 2023-09-01 10.1016/j.micron.2023.103489 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University This research was supported by the EPSRC under the grant numbers EP/X015300/1 , EP/P00945X/1 and by Cambridge NanoDTC, EP/S022953/1 . K. Loeto would like to acknowledge the Botswana government for his Ph.D funding. Dr. Christian Monachon of Attolight is thanked for his ongoing support of the system along with Dr. Alexander Hinz who helped with the growth. 2024-08-15T11:45:59.7348585 2024-06-23T19:50:08.2896376 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering K. Loeto 1 G. Kusch 2 Saptarsi Ghosh 0000-0003-1685-6228 3 M.J. Kappers 4 R.A. Oliver 5
title Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence
spellingShingle Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence
Saptarsi Ghosh
title_short Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence
title_full Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence
title_fullStr Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence
title_full_unstemmed Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence
title_sort Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence
author_id_str_mv 3e247ecabd6eddd319264d066b0ce959
author_id_fullname_str_mv 3e247ecabd6eddd319264d066b0ce959_***_Saptarsi Ghosh
author Saptarsi Ghosh
author2 K. Loeto
G. Kusch
Saptarsi Ghosh
M.J. Kappers
R.A. Oliver
format Journal article
container_title Micron
container_volume 172
container_start_page 103489
publishDate 2023
institution Swansea University
issn 0968-4328
doi_str_mv 10.1016/j.micron.2023.103489
publisher Elsevier BV
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2023-09-01T08:26:13Z
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