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SiC MOSFET reliability: Review of degradation mechanisms, failures, and enhancement strategies

Ahmed Ibrahim, Mohammad Monfared Orcid Logo, Mike Jennings Orcid Logo, Saeed Jahdi, Mohammed Amer Karout Orcid Logo, Barry Nel, Jonathan Evans, Craig A. Fisher

e-Prime – Nexus of Electrical, Electronic, and Intelligent Engineering, Volume: 17, Start page: 201163

Swansea University Authors: Ahmed Ibrahim, Mohammad Monfared Orcid Logo, Mike Jennings Orcid Logo, Jonathan Evans

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DOI (Published version): 10.1016/j.eprime.2026.201163

Abstract

This paper presents a comprehensive review of reliability challenges and degradation mechanisms of silicon carbide (SiC) power MOSFETs, with the objective of clarifying failure phySiCs, test methodologies, and mitigation strategies relevant to high performance power electronic applications. SiC MOSF...

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Published in: e-Prime – Nexus of Electrical, Electronic, and Intelligent Engineering
ISSN: 3117-5112
Published: Elsevier BV 2026
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URI: https://cronfa.swan.ac.uk/Record/cronfa71804
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SiC MOSFETs offer superior material properties, including a wide bandgap (3.26 eV), high breakdown electric field (3 MV/cm), and high thermal conductivity (4.9 W/cm&#xB7;K), enabling operation at high voltage, frequency, and temperature across electric vehicles, renewable energy, aerospace, and industrial systems. However, the rapid adoption of SiC technology has outpaced the development of mature reliability frameworks, leaving critical gaps in understanding long-term degradation under extreme electrical, thermal, and mechanical stresses. This review addresses key reliability concerns, including gate oxide degradation, short-circuit ruggedness, avalanche robustness, thermo-mechanical failure under power cycling, and body diode reliability. Each section explores both fundamental mechanisms and mitigation strategies. Additionally, experimental results from short circuit testing, Unclamped Inductive Switching (UIS) characterization, and body diode evaluation are presented to illustrate practical proofs of some reliability issues. It further incorporates reliability tests reported in standards and the automotive industry, while outlining diagnostic indicators at the device, package, and system levels, emphasizing their sensitivity and applicability. 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spelling 2026-05-13T14:50:55.4282642 v2 71804 2026-04-27 SiC MOSFET reliability: Review of degradation mechanisms, failures, and enhancement strategies 4130ca9d973a287571a8c6bbcae1aa07 Ahmed Ibrahim Ahmed Ibrahim true false adab4560ff08c8e5181ff3f12a4c36fb 0000-0002-8987-0883 Mohammad Monfared Mohammad Monfared true false e0ba5d7ece08cd70c9f8f8683996454a 0000-0003-3270-0805 Mike Jennings Mike Jennings true false 3a4152e0539a5ba25b3bbb9f76033cf7 Jonathan Evans Jonathan Evans true false 2026-04-27 This paper presents a comprehensive review of reliability challenges and degradation mechanisms of silicon carbide (SiC) power MOSFETs, with the objective of clarifying failure phySiCs, test methodologies, and mitigation strategies relevant to high performance power electronic applications. SiC MOSFETs offer superior material properties, including a wide bandgap (3.26 eV), high breakdown electric field (3 MV/cm), and high thermal conductivity (4.9 W/cm·K), enabling operation at high voltage, frequency, and temperature across electric vehicles, renewable energy, aerospace, and industrial systems. However, the rapid adoption of SiC technology has outpaced the development of mature reliability frameworks, leaving critical gaps in understanding long-term degradation under extreme electrical, thermal, and mechanical stresses. This review addresses key reliability concerns, including gate oxide degradation, short-circuit ruggedness, avalanche robustness, thermo-mechanical failure under power cycling, and body diode reliability. Each section explores both fundamental mechanisms and mitigation strategies. Additionally, experimental results from short circuit testing, Unclamped Inductive Switching (UIS) characterization, and body diode evaluation are presented to illustrate practical proofs of some reliability issues. It further incorporates reliability tests reported in standards and the automotive industry, while outlining diagnostic indicators at the device, package, and system levels, emphasizing their sensitivity and applicability. In addition, it examines emerging trends including AI-driven reliability prediction, advanced packaging, novel oxide technologies, and next generation device structures, offering a forward-looking roadmap for improving SiC MOSFET reliability. Journal Article e-Prime – Nexus of Electrical, Electronic, and Intelligent Engineering 17 201163 Elsevier BV 3117-5112 Degradation; Failure; Gate oxide; Power MOSFETS; Reliability; Ruggedness; Silicon carbide (SiC); Wide bandgap 1 9 2026 2026-09-01 10.1016/j.eprime.2026.201163 COLLEGE NANME COLLEGE CODE Swansea University SU College/Department paid the OA fee 2026-05-13T14:50:55.4282642 2026-04-27T10:44:31.1254540 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Ahmed Ibrahim 1 Mohammad Monfared 0000-0002-8987-0883 2 Mike Jennings 0000-0003-3270-0805 3 Saeed Jahdi 4 Mohammed Amer Karout 0000-0003-1660-1196 5 Barry Nel 6 Jonathan Evans 7 Craig A. Fisher 8 71804__36719__c756984bbc394791824c42f5b9e3cb0a.pdf 71804.VOR.pdf 2026-05-13T14:44:27.1029196 Output 6449923 application/pdf Version of Record true © 2026 The Author(s). This is an open access article under the CC BY license. true eng http://creativecommons.org/licenses/by/4.0/
title SiC MOSFET reliability: Review of degradation mechanisms, failures, and enhancement strategies
spellingShingle SiC MOSFET reliability: Review of degradation mechanisms, failures, and enhancement strategies
Ahmed Ibrahim
Mohammad Monfared
Mike Jennings
Jonathan Evans
title_short SiC MOSFET reliability: Review of degradation mechanisms, failures, and enhancement strategies
title_full SiC MOSFET reliability: Review of degradation mechanisms, failures, and enhancement strategies
title_fullStr SiC MOSFET reliability: Review of degradation mechanisms, failures, and enhancement strategies
title_full_unstemmed SiC MOSFET reliability: Review of degradation mechanisms, failures, and enhancement strategies
title_sort SiC MOSFET reliability: Review of degradation mechanisms, failures, and enhancement strategies
author_id_str_mv 4130ca9d973a287571a8c6bbcae1aa07
adab4560ff08c8e5181ff3f12a4c36fb
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3a4152e0539a5ba25b3bbb9f76033cf7
author_id_fullname_str_mv 4130ca9d973a287571a8c6bbcae1aa07_***_Ahmed Ibrahim
adab4560ff08c8e5181ff3f12a4c36fb_***_Mohammad Monfared
e0ba5d7ece08cd70c9f8f8683996454a_***_Mike Jennings
3a4152e0539a5ba25b3bbb9f76033cf7_***_Jonathan Evans
author Ahmed Ibrahim
Mohammad Monfared
Mike Jennings
Jonathan Evans
author2 Ahmed Ibrahim
Mohammad Monfared
Mike Jennings
Saeed Jahdi
Mohammed Amer Karout
Barry Nel
Jonathan Evans
Craig A. Fisher
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container_title e-Prime – Nexus of Electrical, Electronic, and Intelligent Engineering
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container_start_page 201163
publishDate 2026
institution Swansea University
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doi_str_mv 10.1016/j.eprime.2026.201163
publisher Elsevier BV
college_str Faculty of Science and Engineering
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hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
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hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
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description This paper presents a comprehensive review of reliability challenges and degradation mechanisms of silicon carbide (SiC) power MOSFETs, with the objective of clarifying failure phySiCs, test methodologies, and mitigation strategies relevant to high performance power electronic applications. SiC MOSFETs offer superior material properties, including a wide bandgap (3.26 eV), high breakdown electric field (3 MV/cm), and high thermal conductivity (4.9 W/cm·K), enabling operation at high voltage, frequency, and temperature across electric vehicles, renewable energy, aerospace, and industrial systems. However, the rapid adoption of SiC technology has outpaced the development of mature reliability frameworks, leaving critical gaps in understanding long-term degradation under extreme electrical, thermal, and mechanical stresses. This review addresses key reliability concerns, including gate oxide degradation, short-circuit ruggedness, avalanche robustness, thermo-mechanical failure under power cycling, and body diode reliability. Each section explores both fundamental mechanisms and mitigation strategies. Additionally, experimental results from short circuit testing, Unclamped Inductive Switching (UIS) characterization, and body diode evaluation are presented to illustrate practical proofs of some reliability issues. It further incorporates reliability tests reported in standards and the automotive industry, while outlining diagnostic indicators at the device, package, and system levels, emphasizing their sensitivity and applicability. In addition, it examines emerging trends including AI-driven reliability prediction, advanced packaging, novel oxide technologies, and next generation device structures, offering a forward-looking roadmap for improving SiC MOSFET reliability.
published_date 2026-09-01T06:30:13Z
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