Journal article 886 views
Reliability Study of MOS Capacitors Fabricated on 3C-SiC/Si Substrates
Materials Science Forum, Volume: 1004, Pages: 659 - 664
Swansea University Author: Mike Jennings
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DOI (Published version): 10.4028/www.scientific.net/msf.1004.659
Abstract
Reliability Study of MOS Capacitors Fabricated on 3C-SiC/Si Substrates
Published in: | Materials Science Forum |
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ISSN: | 1662-9752 |
Published: |
Trans Tech Publications, Ltd.
2020
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Online Access: |
Check full text
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URI: | https://cronfa.swan.ac.uk/Record/cronfa57466 |
Keywords: |
3C-SiC, MOS capacitors, reliability, dielectric breakdown |
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College: |
Faculty of Science and Engineering |
Start Page: |
659 |
End Page: |
664 |