Journal article 1374 views
3C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitations
Anastasios Arvanitopoulos 
,
Marina Antoniou ,
Fan Li ,
Mike Jennings ,
Samuel Perkins ,
Konstantinos Gyftakis ,
Neophytos Lophitis
,
Marina Antoniou ,
Fan Li ,
Mike Jennings ,
Samuel Perkins ,
Konstantinos Gyftakis ,
Neophytos Lophitis
IEEE Transactions on Industry Applications, Volume: 58, Issue: 1, Pages: 565 - 575
Swansea University Author:
Mike Jennings
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1109/tia.2021.3119269
Abstract
3C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitations
| Published in: | IEEE Transactions on Industry Applications |
|---|---|
| ISSN: | 0093-9994 1939-9367 |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2022
|
| Online Access: |
Check full text
|
| URI: | https://cronfa.swan.ac.uk/Record/cronfa58665 |
| College: |
Faculty of Science and Engineering |
|---|---|
| Funders: |
CHALLENGE (Grant Number: HORIZON 2020-NMBP-720827)
European Union's Horizon 2020 Program
10.13039/501100000288-Royal Society (Grant Number: DH160139) |
| Issue: |
1 |
| Start Page: |
565 |
| End Page: |
575 |