Modulating electronic properties of β-Ga2O3 by strain engineering

Zhang, Ruijia; Li, Min; Wu, Gai; Li, Lijie; Zhang, Zhaofu; Liang, Kang; Shen, Wei

doi:10.1016/j.rinp.2023.106916

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Modulating electronic properties of β-Ga2O3 by strain engineering

Ruijia Zhang, Min Li, Gai Wu

, Lijie Li

, Zhaofu Zhang, Kang Liang, Wei Shen

Results in Physics, Volume: 52, Start page: 106916

Swansea University Author: Lijie Li

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DOI (Published version): 10.1016/j.rinp.2023.106916

Abstract

β-Ga2O3 is a promising material for the development of next-generation power electronic and optoelectronic devices due to its exceptional properties, including ultrawide bandgap and thermodynamic stability. Strain engineering has emerged as a powerful method to modulate the physical properties of ma...

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Published in:	Results in Physics
ISSN:	2211-3797
Published:	Elsevier BV 2023
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URI:	https://cronfa.swan.ac.uk/Record/cronfa64162
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spelling	v2 64162 2023-08-30 Modulating electronic properties of β-Ga2O3 by strain engineering ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2023-08-30 EEEG β-Ga2O3 is a promising material for the development of next-generation power electronic and optoelectronic devices due to its exceptional properties, including ultrawide bandgap and thermodynamic stability. Strain engineering has emerged as a powerful method to modulate the physical properties of materials and has been widely employed in semiconductor devices to enhance their performance and functionality. Our study focuses on the effects of strain engineering on the electronic properties of β-Ga2O3. Using density functional theory, we calculated the band structures and electron effective mass of β-Ga2O3 under different strain states. Our investigation revealed that strain manipulation can induce an indirect-direct bandgap transition. Strain can also lead to changes in effective masses and anisotropy of electron mobility. Our calculations provide important insights into the potential of strain engineering as a powerful tool for modulating the electronic properties of β-Ga2O3, with important implications for practical device applications. Journal Article Results in Physics 52 106916 Elsevier BV 2211-3797 β-Ga2O3, Strain engineering, Bandgap, Electron effective mass 30 9 2023 2023-09-30 10.1016/j.rinp.2023.106916 http://dx.doi.org/10.1016/j.rinp.2023.106916 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University This work is funded by the National Natural Science Foundation of China (Nos. 52202045, 62204173, 62004141), the Natural Science Foundation of Hubei Province (No. 2022CFB606), the Fundamental Research Funds for the Central Universities (Nos. 2042023kf0112, 2042022kf1028), the Guangdong Basic and Applied Basic Research Fund: Guangdong-Shenzhen Joint Fund (No. 2020B1515120005), the Guangdong Basic and Applied Basic Research Foundation (No. 2021A1515110890), Open Fund of Hubei Key Laboratory of Electronic Manufacturing and Packaging Integration (No. EMPI2023027), the Knowledge Innovation Program of Wuhan-Shuguang (Nos. 2023010201020255, 2023010201020243). 2023-09-26T16:53:23.9188710 2023-08-30T09:29:29.5456949 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Ruijia Zhang 1 Min Li 2 Gai Wu 0000-0002-9726-6328 3 Lijie Li 0000-0003-4630-7692 4 Zhaofu Zhang 5 Kang Liang 6 Wei Shen 0000-0003-4389-3112 7 64162__28640__af5b6935d24245d0a2daaa1adb599acf.pdf 64162.VOR.pdf 2023-09-26T16:51:02.8005818 Output 4716403 application/pdf Version of Record true © 2023 The Author(s). Published by Elsevier B.V. Distributed under the terms of a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License (CC BY-NC-ND 4.0). true eng https://creativecommons.org/licenses/by-nc-nd/4.0/
title	Modulating electronic properties of β-Ga2O3 by strain engineering
spellingShingle	Modulating electronic properties of β-Ga2O3 by strain engineering Lijie Li
title_short	Modulating electronic properties of β-Ga2O3 by strain engineering
title_full	Modulating electronic properties of β-Ga2O3 by strain engineering
title_fullStr	Modulating electronic properties of β-Ga2O3 by strain engineering
title_full_unstemmed	Modulating electronic properties of β-Ga2O3 by strain engineering
title_sort	Modulating electronic properties of β-Ga2O3 by strain engineering
author_id_str_mv	ed2c658b77679a28e4c1dcf95af06bd6
author_id_fullname_str_mv	ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author	Lijie Li
author2	Ruijia Zhang Min Li Gai Wu Lijie Li Zhaofu Zhang Kang Liang Wei Shen
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container_title	Results in Physics
container_volume	52
container_start_page	106916
publishDate	2023
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publisher	Elsevier BV
college_str	Faculty of Science and Engineering
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url	http://dx.doi.org/10.1016/j.rinp.2023.106916
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description	β-Ga2O3 is a promising material for the development of next-generation power electronic and optoelectronic devices due to its exceptional properties, including ultrawide bandgap and thermodynamic stability. Strain engineering has emerged as a powerful method to modulate the physical properties of materials and has been widely employed in semiconductor devices to enhance their performance and functionality. Our study focuses on the effects of strain engineering on the electronic properties of β-Ga2O3. Using density functional theory, we calculated the band structures and electron effective mass of β-Ga2O3 under different strain states. Our investigation revealed that strain manipulation can induce an indirect-direct bandgap transition. Strain can also lead to changes in effective masses and anisotropy of electron mobility. Our calculations provide important insights into the potential of strain engineering as a powerful tool for modulating the electronic properties of β-Ga2O3, with important implications for practical device applications.
published_date	2023-09-30T16:53:25Z
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Modulating electronic properties of β-Ga2O3 by strain engineering

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