No Cover Image

Journal article 698 views 189 downloads

Piezoelectric properties of substitutionally doped β-Ga2O3

Lijie Li Orcid Logo

AIP Advances, Volume: 11, Issue: 6, Start page: 065111

Swansea University Author: Lijie Li Orcid Logo

  • 56978.pdf

    PDF | Version of Record

    © 2021 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license

    Download (7.37MB)

Check full text

DOI (Published version): 10.1063/5.0048975

Abstract

Modern semiconductor materials are increasingly used in multidisciplinary systems demonstrating cross-interactions between mechanical strains and electronic potentials, which gives rise to ubiquitous applications in high sensitivity, self-powered sensor devices. One of the fundamental prerequisites...

Full description

Published in: AIP Advances
ISSN: 2158-3226
Published: AIP Publishing 2021
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa56978
Abstract: Modern semiconductor materials are increasingly used in multidisciplinary systems demonstrating cross-interactions between mechanical strains and electronic potentials, which gives rise to ubiquitous applications in high sensitivity, self-powered sensor devices. One of the fundamental prerequisites for such semiconductor materials to exhibit piezoelectric properties is the noncentrosymmetry of the crystal structures. β-Ga2O3 has been an emerging compound semiconductor material due to its ultra-wide bandgap. However, pristine β-Ga2O3 has an inversion center, displaying no piezoelectric effect. This work discovered that substitutionally doped β-Ga2O3 possesses piezoelectric property by using the first principles method, while a majority of previous research on its substitutional doping has been focused on the purposes of increasing electrical conductivity and formation of semiconductor heterojunctions. More interestingly, it is unveiled from this work that the formation energy has a clear relation with the piezoelectric coefficient.
Keywords: β-Ga2O3, Piezoelectric property, Substitutional doping, First principles method
College: Faculty of Science and Engineering
Funders: The author would like to thank the EPSRC Project (No. EP/T019085/1) and the European Regional Development Fund (ERDF) for funding the Solar Photovoltaic Academic Research Consortium (SPARC II).
Issue: 6
Start Page: 065111

Similar Items