No Cover Image

Journal article 206 views 65 downloads

Modulating electronic properties of β-Ga2O3 by strain engineering

Ruijia Zhang, Min Li, Gai Wu Orcid Logo, Lijie Li Orcid Logo, Zhaofu Zhang, Kang Liang, Wei Shen Orcid Logo

Results in Physics, Volume: 52, Start page: 106916

Swansea University Author: Lijie Li Orcid Logo

  • 64162.VOR.pdf

    PDF | Version of Record

    © 2023 The Author(s). Published by Elsevier B.V. Distributed under the terms of a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License (CC BY-NC-ND 4.0).

    Download (4.5MB)

Abstract

β-Ga2O3 is a promising material for the development of next-generation power electronic and optoelectronic devices due to its exceptional properties, including ultrawide bandgap and thermodynamic stability. Strain engineering has emerged as a powerful method to modulate the physical properties of ma...

Full description

Published in: Results in Physics
ISSN: 2211-3797
Published: Elsevier BV 2023
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa64162
Tags: Add Tag
No Tags, Be the first to tag this record!
Abstract: β-Ga2O3 is a promising material for the development of next-generation power electronic and optoelectronic devices due to its exceptional properties, including ultrawide bandgap and thermodynamic stability. Strain engineering has emerged as a powerful method to modulate the physical properties of materials and has been widely employed in semiconductor devices to enhance their performance and functionality. Our study focuses on the effects of strain engineering on the electronic properties of β-Ga2O3. Using density functional theory, we calculated the band structures and electron effective mass of β-Ga2O3 under different strain states. Our investigation revealed that strain manipulation can induce an indirect-direct bandgap transition. Strain can also lead to changes in effective masses and anisotropy of electron mobility. Our calculations provide important insights into the potential of strain engineering as a powerful tool for modulating the electronic properties of β-Ga2O3, with important implications for practical device applications.
Keywords: β-Ga2O3, Strain engineering, Bandgap, Electron effective mass
College: Faculty of Science and Engineering
Funders: This work is funded by the National Natural Science Foundation of China (Nos. 52202045, 62204173, 62004141), the Natural Science Foundation of Hubei Province (No. 2022CFB606), the Fundamental Research Funds for the Central Universities (Nos. 2042023kf0112, 2042022kf1028), the Guangdong Basic and Applied Basic Research Fund: Guangdong-Shenzhen Joint Fund (No. 2020B1515120005), the Guangdong Basic and Applied Basic Research Foundation (No. 2021A1515110890), Open Fund of Hubei Key Laboratory of Electronic Manufacturing and Packaging Integration (No. EMPI2023027), the Knowledge Innovation Program of Wuhan-Shuguang (Nos. 2023010201020255, 2023010201020243).
Start Page: 106916