No Cover Image

Journal article 547 views 139 downloads

Piezoelectric properties of substitutionally doped β-Ga2O3

Lijie Li Orcid Logo

AIP Advances, Volume: 11, Issue: 6, Start page: 065111

Swansea University Author: Lijie Li Orcid Logo

  • 56978.pdf

    PDF | Version of Record

    © 2021 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license

    Download (7.37MB)

Check full text

DOI (Published version): 10.1063/5.0048975

Abstract

Modern semiconductor materials are increasingly used in multidisciplinary systems demonstrating cross-interactions between mechanical strains and electronic potentials, which gives rise to ubiquitous applications in high sensitivity, self-powered sensor devices. One of the fundamental prerequisites...

Full description

Published in: AIP Advances
ISSN: 2158-3226
Published: AIP Publishing 2021
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa56978
Tags: Add Tag
No Tags, Be the first to tag this record!
first_indexed 2021-06-03T17:08:55Z
last_indexed 2023-01-11T14:36:34Z
id cronfa56978
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2022-08-17T13:58:49.4456031</datestamp><bib-version>v2</bib-version><id>56978</id><entry>2021-05-27</entry><title>Piezoelectric properties of substitutionally doped &#x3B2;-Ga2O3</title><swanseaauthors><author><sid>ed2c658b77679a28e4c1dcf95af06bd6</sid><ORCID>0000-0003-4630-7692</ORCID><firstname>Lijie</firstname><surname>Li</surname><name>Lijie Li</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2021-05-27</date><deptcode>EEEG</deptcode><abstract>Modern semiconductor materials are increasingly used in multidisciplinary systems demonstrating cross-interactions between mechanical strains and electronic potentials, which gives rise to ubiquitous applications in high sensitivity, self-powered sensor devices. One of the fundamental prerequisites for such semiconductor materials to exhibit piezoelectric properties is the noncentrosymmetry of the crystal structures. &#x3B2;-Ga2O3 has been an emerging compound semiconductor material due to its ultra-wide bandgap. However, pristine &#x3B2;-Ga2O3 has an inversion center, displaying no piezoelectric effect. This work discovered that substitutionally doped &#x3B2;-Ga2O3 possesses piezoelectric property by using the first principles method, while a majority of previous research on its substitutional doping has been focused on the purposes of increasing electrical conductivity and formation of semiconductor heterojunctions. More interestingly, it is unveiled from this work that the formation energy has a clear relation with the piezoelectric coefficient.</abstract><type>Journal Article</type><journal>AIP Advances</journal><volume>11</volume><journalNumber>6</journalNumber><paginationStart>065111</paginationStart><paginationEnd/><publisher>AIP Publishing</publisher><placeOfPublication/><isbnPrint/><isbnElectronic/><issnPrint/><issnElectronic>2158-3226</issnElectronic><keywords>&#x3B2;-Ga2O3, Piezoelectric property, Substitutional doping, First principles method</keywords><publishedDay>3</publishedDay><publishedMonth>6</publishedMonth><publishedYear>2021</publishedYear><publishedDate>2021-06-03</publishedDate><doi>10.1063/5.0048975</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm>External research funder(s) paid the OA fee (includes OA grants disbursed by the Library)</apcterm><funders>The author would like to thank the EPSRC Project (No. EP/T019085/1) and the European Regional Development Fund (ERDF) for funding the Solar Photovoltaic Academic Research Consortium (SPARC II).</funders><projectreference/><lastEdited>2022-08-17T13:58:49.4456031</lastEdited><Created>2021-05-27T14:16:55.0753401</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Lijie</firstname><surname>Li</surname><orcid>0000-0003-4630-7692</orcid><order>1</order></author></authors><documents><document><filename>56978__20143__a7a1fd5357924baab2fd8f9c4228d1a3.pdf</filename><originalFilename>56978.pdf</originalFilename><uploaded>2021-06-14T10:02:52.5678456</uploaded><type>Output</type><contentLength>7731086</contentLength><contentType>application/pdf</contentType><version>Version of Record</version><cronfaStatus>true</cronfaStatus><documentNotes>&#xA9; 2021 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license</documentNotes><copyrightCorrect>true</copyrightCorrect><language>eng</language><licence>https://creativecommons.org/licenses/by/4.0/</licence></document></documents><OutputDurs/></rfc1807>
spelling 2022-08-17T13:58:49.4456031 v2 56978 2021-05-27 Piezoelectric properties of substitutionally doped β-Ga2O3 ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2021-05-27 EEEG Modern semiconductor materials are increasingly used in multidisciplinary systems demonstrating cross-interactions between mechanical strains and electronic potentials, which gives rise to ubiquitous applications in high sensitivity, self-powered sensor devices. One of the fundamental prerequisites for such semiconductor materials to exhibit piezoelectric properties is the noncentrosymmetry of the crystal structures. β-Ga2O3 has been an emerging compound semiconductor material due to its ultra-wide bandgap. However, pristine β-Ga2O3 has an inversion center, displaying no piezoelectric effect. This work discovered that substitutionally doped β-Ga2O3 possesses piezoelectric property by using the first principles method, while a majority of previous research on its substitutional doping has been focused on the purposes of increasing electrical conductivity and formation of semiconductor heterojunctions. More interestingly, it is unveiled from this work that the formation energy has a clear relation with the piezoelectric coefficient. Journal Article AIP Advances 11 6 065111 AIP Publishing 2158-3226 β-Ga2O3, Piezoelectric property, Substitutional doping, First principles method 3 6 2021 2021-06-03 10.1063/5.0048975 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University External research funder(s) paid the OA fee (includes OA grants disbursed by the Library) The author would like to thank the EPSRC Project (No. EP/T019085/1) and the European Regional Development Fund (ERDF) for funding the Solar Photovoltaic Academic Research Consortium (SPARC II). 2022-08-17T13:58:49.4456031 2021-05-27T14:16:55.0753401 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Lijie Li 0000-0003-4630-7692 1 56978__20143__a7a1fd5357924baab2fd8f9c4228d1a3.pdf 56978.pdf 2021-06-14T10:02:52.5678456 Output 7731086 application/pdf Version of Record true © 2021 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license true eng https://creativecommons.org/licenses/by/4.0/
title Piezoelectric properties of substitutionally doped β-Ga2O3
spellingShingle Piezoelectric properties of substitutionally doped β-Ga2O3
Lijie Li
title_short Piezoelectric properties of substitutionally doped β-Ga2O3
title_full Piezoelectric properties of substitutionally doped β-Ga2O3
title_fullStr Piezoelectric properties of substitutionally doped β-Ga2O3
title_full_unstemmed Piezoelectric properties of substitutionally doped β-Ga2O3
title_sort Piezoelectric properties of substitutionally doped β-Ga2O3
author_id_str_mv ed2c658b77679a28e4c1dcf95af06bd6
author_id_fullname_str_mv ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author Lijie Li
author2 Lijie Li
format Journal article
container_title AIP Advances
container_volume 11
container_issue 6
container_start_page 065111
publishDate 2021
institution Swansea University
issn 2158-3226
doi_str_mv 10.1063/5.0048975
publisher AIP Publishing
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Modern semiconductor materials are increasingly used in multidisciplinary systems demonstrating cross-interactions between mechanical strains and electronic potentials, which gives rise to ubiquitous applications in high sensitivity, self-powered sensor devices. One of the fundamental prerequisites for such semiconductor materials to exhibit piezoelectric properties is the noncentrosymmetry of the crystal structures. β-Ga2O3 has been an emerging compound semiconductor material due to its ultra-wide bandgap. However, pristine β-Ga2O3 has an inversion center, displaying no piezoelectric effect. This work discovered that substitutionally doped β-Ga2O3 possesses piezoelectric property by using the first principles method, while a majority of previous research on its substitutional doping has been focused on the purposes of increasing electrical conductivity and formation of semiconductor heterojunctions. More interestingly, it is unveiled from this work that the formation energy has a clear relation with the piezoelectric coefficient.
published_date 2021-06-03T04:12:21Z
_version_ 1763753844182876160
score 11.013731

Similar Items