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Synthesis of β-Ga2O3 thin film assisted by microwave annealing

Nafiseh Badiei, AFSHIN TARAT, Lijie Li Orcid Logo

AIP Advances, Volume: 12, Issue: 8, Start page: 085118

Swansea University Authors: Nafiseh Badiei, AFSHIN TARAT, Lijie Li Orcid Logo

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DOI (Published version): 10.1063/5.0110530

Abstract

β-Ga2O3 is increasingly being used in power electronics and UV sensors. The preparation of β-Ga2O3 thin films requires costly and time-consuming fabrication processes. Therefore, developing short-time and low-cost fabrication processes of the β-Ga2O3 thin film has been greatly demanded to quicken th...

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Published in: AIP Advances
ISSN: 2158-3226
Published: AIP Publishing 2022
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa60786
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Abstract: β-Ga2O3 is increasingly being used in power electronics and UV sensors. The preparation of β-Ga2O3 thin films requires costly and time-consuming fabrication processes. Therefore, developing short-time and low-cost fabrication processes of the β-Ga2O3 thin film has been greatly demanded to quicken the pace of applying this material in practical devices and systems. In this paper, a new fabrication process combining physical vapor deposition and microwave localized annealing has been postulated for β-Ga2O3 thin films. The experimental results show that after microwave annealing band gaps have been slightly adjusted, the surface morphology has been improved and extra diffraction peaks appear, which give rise to stronger β-phase characteristics in the Ga2O3 thin film. Calculation based on density functional theory has been conducted to show the electronic band structures, formation energies, and optical absorptions of both types.
College: Faculty of Science and Engineering
Funders: The authors acknowledge the support from the European Regional Development Fund (ERDF) for funding the Solar Photovoltaic Academic Research Consortium (SPARC II), and the EPSRC Project (Grant No. EP/T019085/1).
Issue: 8
Start Page: 085118