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Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application

BEN JONES, Jacob Mitchell, Jon Evans, Finn Monaghan, Mike Jennings Orcid Logo, Chris Bolton, Kevin Riddel, Huma Ashraf, Owen Guy Orcid Logo

Materials Science Forum, Volume: 1062, Pages: 582 - 587

Swansea University Authors: BEN JONES, Jacob Mitchell, Finn Monaghan, Mike Jennings Orcid Logo, Owen Guy Orcid Logo

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DOI (Published version): 10.4028/p-xd84zm

Abstract

In this paper we report the progress of our SiC trench etch development using enhanced ICP-based etch technology. Computer modelling of the electric field strength in the gate oxide as a function of corner geometry was used to illustrate trench corner rounding as an effective method to avoid to high...

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Published in: Materials Science Forum
ISSN: 1662-9752
Published: Trans Tech Publications, Ltd. 2022
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URI: https://cronfa.swan.ac.uk/Record/cronfa60613
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spelling 2022-08-15T14:04:51.0934381 v2 60613 2022-07-25 Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application 9c9c58d681517c977d63ca49276ad73e BEN JONES BEN JONES true false 522a9b94c350f5977584e0fd942facdc Jacob Mitchell Jacob Mitchell true false 5a628866e0e707d66c657b84e4ca8c9a Finn Monaghan Finn Monaghan true false e0ba5d7ece08cd70c9f8f8683996454a 0000-0003-3270-0805 Mike Jennings Mike Jennings true false c7fa5949b8528e048c5b978005f66794 0000-0002-6449-4033 Owen Guy Owen Guy true false 2022-07-25 In this paper we report the progress of our SiC trench etch development using enhanced ICP-based etch technology. Computer modelling of the electric field strength in the gate oxide as a function of corner geometry was used to illustrate trench corner rounding as an effective method to avoid to high gate oxide field strengths. This is an effort to examine a major ongoing issue in device reliability, and to govern future device design. Journal Article Materials Science Forum 1062 582 587 Trans Tech Publications, Ltd. 1662-9752 Automotive, Power Device, Reliability, Electric Vehicle, Trench Processing, FoundryCompatible, Trench Corner Rounding, Trench device simulation, ICP etch 31 5 2022 2022-05-31 10.4028/p-xd84zm COLLEGE NANME COLLEGE CODE Swansea University 2022-08-15T14:04:51.0934381 2022-07-25T08:43:13.4380264 Faculty of Science and Engineering School of Engineering and Applied Sciences - Chemistry BEN JONES 1 Jacob Mitchell 2 Jon Evans 3 Finn Monaghan 4 Mike Jennings 0000-0003-3270-0805 5 Chris Bolton 6 Kevin Riddel 7 Huma Ashraf 8 Owen Guy 0000-0002-6449-4033 9 60613__24922__055a0b42680247499222f5046f067486.pdf 60613.pdf 2022-08-15T13:53:16.6518062 Output 869819 application/pdf Version of Record true This article is an open access article under the terms and conditions of the Creative Commons Attribution (CC BY) license true eng https://creativecommons.org/licenses/by/4.0
title Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application
spellingShingle Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application
BEN JONES
Jacob Mitchell
Finn Monaghan
Mike Jennings
Owen Guy
title_short Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application
title_full Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application
title_fullStr Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application
title_full_unstemmed Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application
title_sort Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application
author_id_str_mv 9c9c58d681517c977d63ca49276ad73e
522a9b94c350f5977584e0fd942facdc
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e0ba5d7ece08cd70c9f8f8683996454a
c7fa5949b8528e048c5b978005f66794
author_id_fullname_str_mv 9c9c58d681517c977d63ca49276ad73e_***_BEN JONES
522a9b94c350f5977584e0fd942facdc_***_Jacob Mitchell
5a628866e0e707d66c657b84e4ca8c9a_***_Finn Monaghan
e0ba5d7ece08cd70c9f8f8683996454a_***_Mike Jennings
c7fa5949b8528e048c5b978005f66794_***_Owen Guy
author BEN JONES
Jacob Mitchell
Finn Monaghan
Mike Jennings
Owen Guy
author2 BEN JONES
Jacob Mitchell
Jon Evans
Finn Monaghan
Mike Jennings
Chris Bolton
Kevin Riddel
Huma Ashraf
Owen Guy
format Journal article
container_title Materials Science Forum
container_volume 1062
container_start_page 582
publishDate 2022
institution Swansea University
issn 1662-9752
doi_str_mv 10.4028/p-xd84zm
publisher Trans Tech Publications, Ltd.
college_str Faculty of Science and Engineering
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hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Chemistry{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Chemistry
document_store_str 1
active_str 0
description In this paper we report the progress of our SiC trench etch development using enhanced ICP-based etch technology. Computer modelling of the electric field strength in the gate oxide as a function of corner geometry was used to illustrate trench corner rounding as an effective method to avoid to high gate oxide field strengths. This is an effort to examine a major ongoing issue in device reliability, and to govern future device design.
published_date 2022-05-31T04:18:52Z
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