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Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application
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Chris Bolton,
Kevin Riddel,
Huma Ashraf,
Owen Guy
Materials Science Forum, Volume: 1062, Pages: 582 - 587
Swansea University Authors:
BEN JONES, Jacob Mitchell, Finn Monaghan, Mike Jennings , Owen Guy
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DOI (Published version): 10.4028/p-xd84zm
Abstract
In this paper we report the progress of our SiC trench etch development using enhanced ICP-based etch technology. Computer modelling of the electric field strength in the gate oxide as a function of corner geometry was used to illustrate trench corner rounding as an effective method to avoid to high...
| Published in: | Materials Science Forum |
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| ISSN: | 1662-9752 |
| Published: |
Trans Tech Publications, Ltd.
2022
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa60613 |
| Abstract: |
In this paper we report the progress of our SiC trench etch development using enhanced ICP-based etch technology. Computer modelling of the electric field strength in the gate oxide as a function of corner geometry was used to illustrate trench corner rounding as an effective method to avoid to high gate oxide field strengths. This is an effort to examine a major ongoing issue in device reliability, and to govern future device design. |
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| Keywords: |
Automotive, Power Device, Reliability, Electric Vehicle, Trench Processing, FoundryCompatible, Trench Corner Rounding, Trench device simulation, ICP etch |
| College: |
Faculty of Science and Engineering |
| Start Page: |
582 |
| End Page: |
587 |