A study on free-standing 3C-SiC bipolar power diodes

Li, Fan; Renz, Arne Benjamin; Pérez-Tomás, Amador; Shah, Vishal; Gammon, Peter; Via, Francesco La; Jennings, Mike; Mawby, Phil

doi:10.1063/5.0054433

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A study on free-standing 3C-SiC bipolar power diodes

Fan Li, Arne Benjamin Renz, Amador Pérez-Tomás, Vishal Shah, Peter Gammon, Francesco La Via, Mike Jennings

, Phil Mawby

Applied Physics Letters, Volume: 118, Issue: 24, Start page: 242101

Swansea University Author: Mike Jennings

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DOI (Published version): 10.1063/5.0054433

Abstract

A low p–n built-in potential (1.75 V) makes 3C-SiC an attractive choice for medium voltage bipolar or charge balanced devices. Until recently, most 3C-SiC had been grown on Si, and power device fabrication had, therefore, been hindered by issues, such as high defect density and limited processing te...

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Published in:	Applied Physics Letters
ISSN:	0003-6951 1077-3118
Published:	AIP Publishing 2021
Online Access:	Check full text
URI:	https://cronfa.swan.ac.uk/Record/cronfa57198
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first_indexed	2021-06-24T08:55:42Z
last_indexed	2021-09-16T03:21:25Z
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spelling	2021-09-15T12:26:43.0519904 v2 57198 2021-06-24 A study on free-standing 3C-SiC bipolar power diodes e0ba5d7ece08cd70c9f8f8683996454a 0000-0003-3270-0805 Mike Jennings Mike Jennings true false 2021-06-24 EEEG A low p–n built-in potential (1.75 V) makes 3C-SiC an attractive choice for medium voltage bipolar or charge balanced devices. Until recently, most 3C-SiC had been grown on Si, and power device fabrication had, therefore, been hindered by issues, such as high defect density and limited processing temperature, while devices were necessarily limited to lateral structures. In this work, we present the fabrication and characterization of a vertical PiN diode using bulk 3C-SiC material. A p-type ohmic contact was obtained on Al implanted regions with a specific contact resistance ∼10−3 Ω cm2. The fabricated PiN diode has a low forward voltage drop of 2.7 V at 1000 A/cm2, and the on–off ratio at ±3 V is as high as 109. An ideality factor of 1.83–1.99 was achieved, and a blocking voltage of ∼110 V was observed using a single-zone junction termination design. Journal Article Applied Physics Letters 118 24 242101 AIP Publishing 0003-6951 1077-3118 15 6 2021 2021-06-15 10.1063/5.0054433 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2021-09-15T12:26:43.0519904 2021-06-24T09:53:38.6918774 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Fan Li 1 Arne Benjamin Renz 2 Amador Pérez-Tomás 3 Vishal Shah 4 Peter Gammon 5 Francesco La Via 6 Mike Jennings 0000-0003-3270-0805 7 Phil Mawby 8 57198__20469__588197b7d86a44a3a6b96d7f8e5cae04.pdf 57198.pdf 2021-07-28T08:51:02.2117770 Output 329912 application/pdf Accepted Manuscript true true eng
title	A study on free-standing 3C-SiC bipolar power diodes
spellingShingle	A study on free-standing 3C-SiC bipolar power diodes Mike Jennings
title_short	A study on free-standing 3C-SiC bipolar power diodes
title_full	A study on free-standing 3C-SiC bipolar power diodes
title_fullStr	A study on free-standing 3C-SiC bipolar power diodes
title_full_unstemmed	A study on free-standing 3C-SiC bipolar power diodes
title_sort	A study on free-standing 3C-SiC bipolar power diodes
author_id_str_mv	e0ba5d7ece08cd70c9f8f8683996454a
author_id_fullname_str_mv	e0ba5d7ece08cd70c9f8f8683996454a_***_Mike Jennings
author	Mike Jennings
author2	Fan Li Arne Benjamin Renz Amador Pérez-Tomás Vishal Shah Peter Gammon Francesco La Via Mike Jennings Phil Mawby
format	Journal article
container_title	Applied Physics Letters
container_volume	118
container_issue	24
container_start_page	242101
publishDate	2021
institution	Swansea University
issn	0003-6951 1077-3118
doi_str_mv	10.1063/5.0054433
publisher	AIP Publishing
college_str	Faculty of Science and Engineering
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description	A low p–n built-in potential (1.75 V) makes 3C-SiC an attractive choice for medium voltage bipolar or charge balanced devices. Until recently, most 3C-SiC had been grown on Si, and power device fabrication had, therefore, been hindered by issues, such as high defect density and limited processing temperature, while devices were necessarily limited to lateral structures. In this work, we present the fabrication and characterization of a vertical PiN diode using bulk 3C-SiC material. A p-type ohmic contact was obtained on Al implanted regions with a specific contact resistance ∼10−3 Ω cm2. The fabricated PiN diode has a low forward voltage drop of 2.7 V at 1000 A/cm2, and the on–off ratio at ±3 V is as high as 109. An ideality factor of 1.83–1.99 was achieved, and a blocking voltage of ∼110 V was observed using a single-zone junction termination design.
published_date	2021-06-15T04:12:45Z
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score	11.037581

A study on free-standing 3C-SiC bipolar power diodes

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