Journal article 1036 views 236 downloads
A study on free-standing 3C-SiC bipolar power diodes
Fan Li,
Arne Benjamin Renz,
Amador Pérez-Tomás,
Vishal Shah,
Peter Gammon,
Francesco La Via,
Mike Jennings 
,
Phil Mawby
,
Phil Mawby
Applied Physics Letters, Volume: 118, Issue: 24, Start page: 242101
Swansea University Author:
Mike Jennings
-
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DOI (Published version): 10.1063/5.0054433
Abstract
A low p–n built-in potential (1.75 V) makes 3C-SiC an attractive choice for medium voltage bipolar or charge balanced devices. Until recently, most 3C-SiC had been grown on Si, and power device fabrication had, therefore, been hindered by issues, such as high defect density and limited processing te...
| Published in: | Applied Physics Letters |
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| ISSN: | 0003-6951 1077-3118 |
| Published: |
AIP Publishing
2021
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa57198 |
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| Abstract: |
A low p–n built-in potential (1.75 V) makes 3C-SiC an attractive choice for medium voltage bipolar or charge balanced devices. Until recently, most 3C-SiC had been grown on Si, and power device fabrication had, therefore, been hindered by issues, such as high defect density and limited processing temperature, while devices were necessarily limited to lateral structures. In this work, we present the fabrication and characterization of a vertical PiN diode using bulk 3C-SiC material. A p-type ohmic contact was obtained on Al implanted regions with a specific contact resistance ∼10−3 Ω cm2. The fabricated PiN diode has a low forward voltage drop of 2.7 V at 1000 A/cm2, and the on–off ratio at ±3 V is as high as 109. An ideality factor of 1.83–1.99 was achieved, and a blocking voltage of ∼110 V was observed using a single-zone junction termination design. |
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| College: |
Faculty of Science and Engineering |
| Issue: |
24 |
| Start Page: |
242101 |