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Edge-state transport in circular quantum point contact quantum piezotronic transistors

Yuankai Zhou, Yuncheng Jiang, Minjiang Dan, Gongwei Hu, Lijie Li Orcid Logo, Yan Zhang

Nano Energy, Volume: 85

Swansea University Author: Lijie Li Orcid Logo

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DOI (Published version): 10.1016/j.nanoen.2021.106002

Abstract

Quantum piezotronic transistor is studied based on HgTe/CdTe topological insulator with a circular quantum point contact. The radius of the circular region is modulated by strain-induced piezoelectric potential. The electronic transport behavior of the edge and bulk states is explored by calculating...

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Published in: Nano Energy
ISSN: 2211-2855
Published: Elsevier BV 2021
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URI: https://cronfa.swan.ac.uk/Record/cronfa56507
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first_indexed 2021-03-24T09:35:42Z
last_indexed 2021-05-18T03:12:06Z
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spelling 2021-05-17T09:44:05.1182918 v2 56507 2021-03-24 Edge-state transport in circular quantum point contact quantum piezotronic transistors ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2021-03-24 EEEG Quantum piezotronic transistor is studied based on HgTe/CdTe topological insulator with a circular quantum point contact. The radius of the circular region is modulated by strain-induced piezoelectric potential. The electronic transport behavior of the edge and bulk states is explored by calculating the conductance and electronic density distribution under different Fermi energies and strains. Transport property of edge states is studied by machine learning method and the transport conductance can be effectively predicted. These results show that the neural network can be used for obtaining electronic transport properties, and it has great potential for optimizing and designing high-performance quantum piezotronic devices. Journal Article Nano Energy 85 Elsevier BV 2211-2855 Topological insulator, machine learning, quantum piezotronic devices, edge states 1 7 2021 2021-07-01 10.1016/j.nanoen.2021.106002 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2021-05-17T09:44:05.1182918 2021-03-24T09:34:32.8185605 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Yuankai Zhou 1 Yuncheng Jiang 2 Minjiang Dan 3 Gongwei Hu 4 Lijie Li 0000-0003-4630-7692 5 Yan Zhang 6 56507__19558__340a88a37e48463fb9d7128823bc54fd.pdf 56507.pdf 2021-03-25T12:50:11.7395285 Output 5414166 application/pdf Accepted Manuscript true 2022-03-24T00:00:00.0000000 ©2021 All rights reserved. All article content, except where otherwise noted, is licensed under a Creative Commons Attribution Non-Commercial No Derivatives License (CC-BY-NC-ND) true eng http://creativecommons.org/licenses/by-nc-nd/4.0/
title Edge-state transport in circular quantum point contact quantum piezotronic transistors
spellingShingle Edge-state transport in circular quantum point contact quantum piezotronic transistors
Lijie Li
title_short Edge-state transport in circular quantum point contact quantum piezotronic transistors
title_full Edge-state transport in circular quantum point contact quantum piezotronic transistors
title_fullStr Edge-state transport in circular quantum point contact quantum piezotronic transistors
title_full_unstemmed Edge-state transport in circular quantum point contact quantum piezotronic transistors
title_sort Edge-state transport in circular quantum point contact quantum piezotronic transistors
author_id_str_mv ed2c658b77679a28e4c1dcf95af06bd6
author_id_fullname_str_mv ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author Lijie Li
author2 Yuankai Zhou
Yuncheng Jiang
Minjiang Dan
Gongwei Hu
Lijie Li
Yan Zhang
format Journal article
container_title Nano Energy
container_volume 85
publishDate 2021
institution Swansea University
issn 2211-2855
doi_str_mv 10.1016/j.nanoen.2021.106002
publisher Elsevier BV
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Quantum piezotronic transistor is studied based on HgTe/CdTe topological insulator with a circular quantum point contact. The radius of the circular region is modulated by strain-induced piezoelectric potential. The electronic transport behavior of the edge and bulk states is explored by calculating the conductance and electronic density distribution under different Fermi energies and strains. Transport property of edge states is studied by machine learning method and the transport conductance can be effectively predicted. These results show that the neural network can be used for obtaining electronic transport properties, and it has great potential for optimizing and designing high-performance quantum piezotronic devices.
published_date 2021-07-01T04:11:31Z
_version_ 1763753791688015872
score 11.037603

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