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Edge-state transport in circular quantum point contact quantum piezotronic transistors

Yuankai Zhou, Yuncheng Jiang, Minjiang Dan, Gongwei Hu, Lijie Li Orcid Logo, Yan Zhang

Nano Energy, Volume: 85

Swansea University Author: Lijie Li Orcid Logo

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Abstract

Quantum piezotronic transistor is studied based on HgTe/CdTe topological insulator with a circular quantum point contact. The radius of the circular region is modulated by strain-induced piezoelectric potential. The electronic transport behavior of the edge and bulk states is explored by calculating...

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Published in: Nano Energy
ISSN: 2211-2855
Published: Elsevier BV 2021
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa56507
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Abstract: Quantum piezotronic transistor is studied based on HgTe/CdTe topological insulator with a circular quantum point contact. The radius of the circular region is modulated by strain-induced piezoelectric potential. The electronic transport behavior of the edge and bulk states is explored by calculating the conductance and electronic density distribution under different Fermi energies and strains. Transport property of edge states is studied by machine learning method and the transport conductance can be effectively predicted. These results show that the neural network can be used for obtaining electronic transport properties, and it has great potential for optimizing and designing high-performance quantum piezotronic devices.
Keywords: Topological insulator, machine learning, quantum piezotronic devices, edge states
College: Faculty of Science and Engineering