Journal article 1087 views 326 downloads
Ultra-high sensitivity strain sensor based on piezotronic bipolar transistor
Ping Zhu,
Ziming Zhao,
Jiaheng Nie,
Gongwei Hu,
Lijie Li 
,
Yan Zhang
,
Yan Zhang
Nano Energy, Volume: 50, Pages: 744 - 749
Swansea University Author:
Lijie Li
-
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DOI (Published version): 10.1016/j.nanoen.2018.06.035
Abstract
Due to the coupling of piezoelectric and semiconductor properties, the wurtzite structure semiconductors have been used for fabricating high performance piezotronic devices. The carrier transport behavior can be effectively controlled by the polarized charges induced by applied strain. High-sensitiv...
| Published in: | Nano Energy |
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| ISSN: | 2211-2855 |
| Published: |
2018
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa40718 |
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| Abstract: |
Due to the coupling of piezoelectric and semiconductor properties, the wurtzite structure semiconductors have been used for fabricating high performance piezotronic devices. The carrier transport behavior can be effectively controlled by the polarized charges induced by applied strain. High-sensitive piezotronic strain sensors have potential application in next generation self-powered, flexible electronics and wearable systems. In this study, a piezotronic bipolar transistor has been studied through theoretical calculation and numerical simulation. The output current, gauge factor and carrier concentration have been simulated under the influence of different strains. The piezotronic bipolar transistor based strain sensor has ultrahigh sensitivity and the gauge factor can reach over 104. This investigation not only provides a theoretical insight into the piezotronic effect on bipolar transistor, but also presents a new approach to design ultra-high sensitivity strain sensor. |
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| Keywords: |
Piezotronics; Bipolar transistor; Ultrahigh sensitivity strain sensor |
| College: |
Faculty of Science and Engineering |
| Start Page: |
744 |
| End Page: |
749 |