No Cover Image

Journal article 1238 views 362 downloads

Ultra-high sensitivity strain sensor based on piezotronic bipolar transistor

Ping Zhu, Ziming Zhao, Jiaheng Nie, Gongwei Hu, Lijie Li Orcid Logo, Yan Zhang

Nano Energy, Volume: 50, Pages: 744 - 749

Swansea University Author: Lijie Li Orcid Logo

Check full text

DOI (Published version): 10.1016/j.nanoen.2018.06.035

Abstract

Due to the coupling of piezoelectric and semiconductor properties, the wurtzite structure semiconductors have been used for fabricating high performance piezotronic devices. The carrier transport behavior can be effectively controlled by the polarized charges induced by applied strain. High-sensitiv...

Full description

Published in: Nano Energy
ISSN: 2211-2855
Published: 2018
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa40718
first_indexed 2018-06-15T19:33:02Z
last_indexed 2018-09-04T18:55:01Z
id cronfa40718
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2018-09-04T15:20:04.5908175</datestamp><bib-version>v2</bib-version><id>40718</id><entry>2018-06-15</entry><title>Ultra-high sensitivity strain sensor based on piezotronic bipolar transistor</title><swanseaauthors><author><sid>ed2c658b77679a28e4c1dcf95af06bd6</sid><ORCID>0000-0003-4630-7692</ORCID><firstname>Lijie</firstname><surname>Li</surname><name>Lijie Li</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2018-06-15</date><deptcode>ACEM</deptcode><abstract>Due to the coupling of piezoelectric and semiconductor properties, the wurtzite structure semiconductors have been used for fabricating high performance piezotronic devices. The carrier transport behavior can be effectively controlled by the polarized charges induced by applied strain. High-sensitive piezotronic strain sensors have potential application in next generation self-powered, flexible electronics and wearable systems. In this study, a piezotronic bipolar transistor has been studied through theoretical calculation and numerical simulation. The output current, gauge factor and carrier concentration have been simulated under the influence of different strains. The piezotronic bipolar transistor based strain sensor has ultrahigh sensitivity and the gauge factor can reach over 104. This investigation not only provides a theoretical insight into the piezotronic effect on bipolar transistor, but also presents a new approach to design ultra-high sensitivity strain sensor.</abstract><type>Journal Article</type><journal>Nano Energy</journal><volume>50</volume><paginationStart>744</paginationStart><paginationEnd>749</paginationEnd><publisher/><issnPrint>2211-2855</issnPrint><keywords>Piezotronics; Bipolar transistor; Ultrahigh sensitivity strain sensor</keywords><publishedDay>15</publishedDay><publishedMonth>6</publishedMonth><publishedYear>2018</publishedYear><publishedDate>2018-06-15</publishedDate><doi>10.1016/j.nanoen.2018.06.035</doi><url/><notes/><college>COLLEGE NANME</college><department>Aerospace, Civil, Electrical, and Mechanical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>ACEM</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2018-09-04T15:20:04.5908175</lastEdited><Created>2018-06-15T17:11:44.5227753</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Ping</firstname><surname>Zhu</surname><order>1</order></author><author><firstname>Ziming</firstname><surname>Zhao</surname><order>2</order></author><author><firstname>Jiaheng</firstname><surname>Nie</surname><order>3</order></author><author><firstname>Gongwei</firstname><surname>Hu</surname><order>4</order></author><author><firstname>Lijie</firstname><surname>Li</surname><orcid>0000-0003-4630-7692</orcid><order>5</order></author><author><firstname>Yan</firstname><surname>Zhang</surname><order>6</order></author></authors><documents><document><filename>0040718-18062018150117.pdf</filename><originalFilename>zhao2018(3).pdf</originalFilename><uploaded>2018-06-18T15:01:17.2030000</uploaded><type>Output</type><contentLength>454222</contentLength><contentType>application/pdf</contentType><version>Accepted Manuscript</version><cronfaStatus>true</cronfaStatus><embargoDate>2019-06-15T00:00:00.0000000</embargoDate><copyrightCorrect>true</copyrightCorrect><language>eng</language></document></documents><OutputDurs/></rfc1807>
spelling 2018-09-04T15:20:04.5908175 v2 40718 2018-06-15 Ultra-high sensitivity strain sensor based on piezotronic bipolar transistor ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2018-06-15 ACEM Due to the coupling of piezoelectric and semiconductor properties, the wurtzite structure semiconductors have been used for fabricating high performance piezotronic devices. The carrier transport behavior can be effectively controlled by the polarized charges induced by applied strain. High-sensitive piezotronic strain sensors have potential application in next generation self-powered, flexible electronics and wearable systems. In this study, a piezotronic bipolar transistor has been studied through theoretical calculation and numerical simulation. The output current, gauge factor and carrier concentration have been simulated under the influence of different strains. The piezotronic bipolar transistor based strain sensor has ultrahigh sensitivity and the gauge factor can reach over 104. This investigation not only provides a theoretical insight into the piezotronic effect on bipolar transistor, but also presents a new approach to design ultra-high sensitivity strain sensor. Journal Article Nano Energy 50 744 749 2211-2855 Piezotronics; Bipolar transistor; Ultrahigh sensitivity strain sensor 15 6 2018 2018-06-15 10.1016/j.nanoen.2018.06.035 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University 2018-09-04T15:20:04.5908175 2018-06-15T17:11:44.5227753 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Ping Zhu 1 Ziming Zhao 2 Jiaheng Nie 3 Gongwei Hu 4 Lijie Li 0000-0003-4630-7692 5 Yan Zhang 6 0040718-18062018150117.pdf zhao2018(3).pdf 2018-06-18T15:01:17.2030000 Output 454222 application/pdf Accepted Manuscript true 2019-06-15T00:00:00.0000000 true eng
title Ultra-high sensitivity strain sensor based on piezotronic bipolar transistor
spellingShingle Ultra-high sensitivity strain sensor based on piezotronic bipolar transistor
Lijie Li
title_short Ultra-high sensitivity strain sensor based on piezotronic bipolar transistor
title_full Ultra-high sensitivity strain sensor based on piezotronic bipolar transistor
title_fullStr Ultra-high sensitivity strain sensor based on piezotronic bipolar transistor
title_full_unstemmed Ultra-high sensitivity strain sensor based on piezotronic bipolar transistor
title_sort Ultra-high sensitivity strain sensor based on piezotronic bipolar transistor
author_id_str_mv ed2c658b77679a28e4c1dcf95af06bd6
author_id_fullname_str_mv ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author Lijie Li
author2 Ping Zhu
Ziming Zhao
Jiaheng Nie
Gongwei Hu
Lijie Li
Yan Zhang
format Journal article
container_title Nano Energy
container_volume 50
container_start_page 744
publishDate 2018
institution Swansea University
issn 2211-2855
doi_str_mv 10.1016/j.nanoen.2018.06.035
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Due to the coupling of piezoelectric and semiconductor properties, the wurtzite structure semiconductors have been used for fabricating high performance piezotronic devices. The carrier transport behavior can be effectively controlled by the polarized charges induced by applied strain. High-sensitive piezotronic strain sensors have potential application in next generation self-powered, flexible electronics and wearable systems. In this study, a piezotronic bipolar transistor has been studied through theoretical calculation and numerical simulation. The output current, gauge factor and carrier concentration have been simulated under the influence of different strains. The piezotronic bipolar transistor based strain sensor has ultrahigh sensitivity and the gauge factor can reach over 104. This investigation not only provides a theoretical insight into the piezotronic effect on bipolar transistor, but also presents a new approach to design ultra-high sensitivity strain sensor.
published_date 2018-06-15T01:39:01Z
_version_ 1821367642662895616
score 11.04748

Similar Items