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Analysis of Potential and Electron Density Behaviour in Extremely Scaled Si and InGaAs MOSFETs Applying Monte Carlo Simulations

Aynul Islam, Anika Tasnim Aynul, Karol Kalna Orcid Logo

Journal of Physics: Conference Series, Volume: 1637, Start page: 012007

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1088/1742-6596/1637/1/012007

Abstract

Scaling of Silicon and InGaAs MOSFETs of a 25 nm gate length till shortest gate length of 5 nm, simulated this nano-device by Monte Carlo (MC) with quantum corrections. The transistors are scaled-down only in lateral dimensions in order to study electron transport approaching a ballistic limit along...

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Published in: Journal of Physics: Conference Series
ISSN: 1742-6588 1742-6596
Published: IOP Publishing 2020
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URI: https://cronfa.swan.ac.uk/Record/cronfa55818
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spelling 2021-03-15T11:59:23.9165353 v2 55818 2020-12-03 Analysis of Potential and Electron Density Behaviour in Extremely Scaled Si and InGaAs MOSFETs Applying Monte Carlo Simulations 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2020-12-03 EEEG Scaling of Silicon and InGaAs MOSFETs of a 25 nm gate length till shortest gate length of 5 nm, simulated this nano-device by Monte Carlo (MC) with quantum corrections. The transistors are scaled-down only in lateral dimensions in order to study electron transport approaching a ballistic limit along the scaled channel following experimental works. These MC simulations are able to give detailed insight into physical behaviour of electron velocity, electron density, and potential in relation to the drive current. We found that electron peak velocity increases during the scaling in Si MOSFETs till the 10 nm gate length and then dramatically declines due to a strong long-range Coulomb interaction among the source and the drain [16]. This effect is not observed in the equivalent InGaAs MOSFETs in which electron peak velocity exhibits double peak which steadily increases during the scaling [16]. However, the increasing of current in the equivalent InGaAs MOSFETs is moderate, by about 24 %, by comparing of current in the Si MOSFETs of 74 % delivered by 5 nm channel transistor. Journal Article Journal of Physics: Conference Series 1637 012007 IOP Publishing 1742-6588 1742-6596 1 9 2020 2020-09-01 10.1088/1742-6596/1637/1/012007 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2021-03-15T11:59:23.9165353 2020-12-03T10:21:54.7724046 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Aynul Islam 1 Anika Tasnim Aynul 2 Karol Kalna 0000-0002-6333-9189 3 55818__18806__edf8fdce78cf40f1975fe47e04e01aa2.pdf 55818.pdf 2020-12-03T10:23:47.5746951 Output 1471346 application/pdf Version of Record true Released under the terms of the Creative Commons Attribution 3.0 license true eng http://creativecommons.org/licenses/by/3.0
title Analysis of Potential and Electron Density Behaviour in Extremely Scaled Si and InGaAs MOSFETs Applying Monte Carlo Simulations
spellingShingle Analysis of Potential and Electron Density Behaviour in Extremely Scaled Si and InGaAs MOSFETs Applying Monte Carlo Simulations
Karol Kalna
title_short Analysis of Potential and Electron Density Behaviour in Extremely Scaled Si and InGaAs MOSFETs Applying Monte Carlo Simulations
title_full Analysis of Potential and Electron Density Behaviour in Extremely Scaled Si and InGaAs MOSFETs Applying Monte Carlo Simulations
title_fullStr Analysis of Potential and Electron Density Behaviour in Extremely Scaled Si and InGaAs MOSFETs Applying Monte Carlo Simulations
title_full_unstemmed Analysis of Potential and Electron Density Behaviour in Extremely Scaled Si and InGaAs MOSFETs Applying Monte Carlo Simulations
title_sort Analysis of Potential and Electron Density Behaviour in Extremely Scaled Si and InGaAs MOSFETs Applying Monte Carlo Simulations
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 Aynul Islam
Anika Tasnim Aynul
Karol Kalna
format Journal article
container_title Journal of Physics: Conference Series
container_volume 1637
container_start_page 012007
publishDate 2020
institution Swansea University
issn 1742-6588
1742-6596
doi_str_mv 10.1088/1742-6596/1637/1/012007
publisher IOP Publishing
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Scaling of Silicon and InGaAs MOSFETs of a 25 nm gate length till shortest gate length of 5 nm, simulated this nano-device by Monte Carlo (MC) with quantum corrections. The transistors are scaled-down only in lateral dimensions in order to study electron transport approaching a ballistic limit along the scaled channel following experimental works. These MC simulations are able to give detailed insight into physical behaviour of electron velocity, electron density, and potential in relation to the drive current. We found that electron peak velocity increases during the scaling in Si MOSFETs till the 10 nm gate length and then dramatically declines due to a strong long-range Coulomb interaction among the source and the drain [16]. This effect is not observed in the equivalent InGaAs MOSFETs in which electron peak velocity exhibits double peak which steadily increases during the scaling [16]. However, the increasing of current in the equivalent InGaAs MOSFETs is moderate, by about 24 %, by comparing of current in the Si MOSFETs of 74 % delivered by 5 nm channel transistor.
published_date 2020-09-01T04:10:18Z
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score 11.013148

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