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Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers

Steve Wilks, Vincent Teng Orcid Logo

Journal of Applied Physics, Volume: 103, Issue: 5, Pages: 053708 - 053711

Swansea University Authors: Steve Wilks, Vincent Teng Orcid Logo

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DOI (Published version): 10.1063/1.2888522

Published in: Journal of Applied Physics
ISSN: 0021-8979
Published: 2008
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URI: https://cronfa.swan.ac.uk/Record/cronfa5570
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first_indexed 2013-07-23T11:53:02Z
last_indexed 2018-02-09T04:32:00Z
id cronfa5570
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fullrecord <?xml version="1.0" encoding="utf-8"?><rfc1807 xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:xsd="http://www.w3.org/2001/XMLSchema"><bib-version>v2</bib-version><id>5570</id><entry>2013-09-03</entry><title>Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers</title><swanseaauthors><author><sid>948a547e27d969b7e192b4620688704d</sid><firstname>Steve</firstname><surname>Wilks</surname><name>Steve Wilks</name><active>true</active><ethesisStudent>false</ethesisStudent></author><author><sid>98f529f56798da1ba3e6e93d2817c114</sid><ORCID>0000-0003-4325-8573</ORCID><firstname>Vincent</firstname><surname>Teng</surname><name>Vincent Teng</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2013-09-03</date><deptcode>FGSEN</deptcode><abstract/><type>Journal Article</type><journal>Journal of Applied Physics</journal><volume>103</volume><journalNumber>5</journalNumber><paginationStart>053708</paginationStart><paginationEnd>053711</paginationEnd><publisher/><placeOfPublication/><isbnPrint/><isbnElectronic/><issnPrint>0021-8979</issnPrint><issnElectronic/><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2008</publishedYear><publishedDate>2008-12-31</publishedDate><doi>10.1063/1.2888522</doi><url/><notes>From a project that grew out of collaboration with Materials and Engineering Research Institute (MERI) at Sheffield Hallam University to understand the factors that affect the electronic properties of metal contacts to large bandgap materials. This paper successfully demonstrated the crucial interplay between the nanoscale structure of the metal-semiconductor interface and the resulting electrical properties. The author made a substantial contribution to the conception and design of the study, the organisation of the study and to the development of the theoretical model.</notes><college>COLLEGE NANME</college><department>Science and Engineering - Faculty</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>FGSEN</DepartmentCode><institution>Swansea University</institution><apcterm/><funders/><projectreference/><lastEdited>2023-06-23T18:12:52.7410297</lastEdited><Created>2013-09-03T06:12:31.0000000</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Biosciences, Geography and Physics - Physics</level></path><authors><author><firstname>Steve</firstname><surname>Wilks</surname><order>1</order></author><author><firstname>Vincent</firstname><surname>Teng</surname><orcid>0000-0003-4325-8573</orcid><order>2</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling v2 5570 2013-09-03 Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers 948a547e27d969b7e192b4620688704d Steve Wilks Steve Wilks true false 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2013-09-03 FGSEN Journal Article Journal of Applied Physics 103 5 053708 053711 0021-8979 31 12 2008 2008-12-31 10.1063/1.2888522 From a project that grew out of collaboration with Materials and Engineering Research Institute (MERI) at Sheffield Hallam University to understand the factors that affect the electronic properties of metal contacts to large bandgap materials. This paper successfully demonstrated the crucial interplay between the nanoscale structure of the metal-semiconductor interface and the resulting electrical properties. The author made a substantial contribution to the conception and design of the study, the organisation of the study and to the development of the theoretical model. COLLEGE NANME Science and Engineering - Faculty COLLEGE CODE FGSEN Swansea University 2023-06-23T18:12:52.7410297 2013-09-03T06:12:31.0000000 Faculty of Science and Engineering School of Biosciences, Geography and Physics - Physics Steve Wilks 1 Vincent Teng 0000-0003-4325-8573 2
title Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
spellingShingle Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
Steve Wilks
Vincent Teng
title_short Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
title_full Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
title_fullStr Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
title_full_unstemmed Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
title_sort Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
author_id_str_mv 948a547e27d969b7e192b4620688704d
98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv 948a547e27d969b7e192b4620688704d_***_Steve Wilks
98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author Steve Wilks
Vincent Teng
author2 Steve Wilks
Vincent Teng
format Journal article
container_title Journal of Applied Physics
container_volume 103
container_issue 5
container_start_page 053708
publishDate 2008
institution Swansea University
issn 0021-8979
doi_str_mv 10.1063/1.2888522
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Biosciences, Geography and Physics - Physics{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Biosciences, Geography and Physics - Physics
document_store_str 0
active_str 0
published_date 2008-12-31T18:12:47Z
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score 11.037603

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