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Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
Thierry Maffeis 
Journal of Applied Physics
Swansea University Author:
Thierry Maffeis
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DOI (Published version): 10.1063/1.2888522
Abstract
Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
| Published in: | Journal of Applied Physics |
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| Published: |
2008
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa5692 |
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| Item Description: |
This article, published in one of the best applied physics journal (impact factor 2.24 in 2008) describes the formation of metal contacts to AlGaN, a wide band gap semiconductor used in optoelectronics and microelectronics. It is very relevant for the fabrication of any device based on AlGaN such as high speed transistors or blue LEDs and Lasers. |
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| College: |
Faculty of Science and Engineering |