Journal article 1340 views
Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
Steve Wilks,
Vincent Teng 
Journal of Applied Physics, Volume: 103, Issue: 5, Pages: 053708 - 053711
Swansea University Authors:
Steve Wilks, Vincent Teng
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1063/1.2888522
Abstract
Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
| Published in: | Journal of Applied Physics |
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| ISSN: | 0021-8979 |
| Published: |
2008
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa5570 |
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| Item Description: |
From a project that grew out of collaboration with Materials and Engineering Research Institute (MERI) at Sheffield Hallam University to understand the factors that affect the electronic properties of metal contacts to large bandgap materials. This paper successfully demonstrated the crucial interplay between the nanoscale structure of the metal-semiconductor interface and the resulting electrical properties. The author made a substantial contribution to the conception and design of the study, the organisation of the study and to the development of the theoretical model. |
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| College: |
Faculty of Science and Engineering |
| Issue: |
5 |
| Start Page: |
053708 |
| End Page: |
053711 |