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3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)

Francesco La Via, Fabrizio Roccaforte, Antonino La Magna, Roberta Nipoti, Fulvio Mancarella, Peter Wellman, Danilo Crippa, Marco Mauceri, Peter Ward, Leo Miglio, Marcin Zielinski , Adolf Schöner, Ahmed Nejim, Laura Vivani, Rositza Yakimova, Mikael Syväjärvi, Gregory Grosset, Frank Torregrosa, Michael Jennings, Philip A. Mawby, Ruggero Anzalone, Salvatore Coffa, Hiroyuki Nagasawa, Mike Jennings Orcid Logo

Materials Science Forum, Volume: 924, Pages: 913 - 918

Swansea University Author: Mike Jennings Orcid Logo

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DOI (Published version): 10.4028/www.scientific.net/MSF.924.913

Abstract

The cubic polytype of SiC (3C-SiC) is the only one that can be grown on silicon substrate with the thickness required for targeted applications. Possibility to grow such layers has remained for a long period a real advantage in terms of scalability. Even the relatively narrow band-gap of 3C-SiC (2.3...

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Published in: Materials Science Forum
ISSN: 1662-9752
Published: 2018
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URI: https://cronfa.swan.ac.uk/Record/cronfa49905
first_indexed 2019-04-08T10:16:43Z
last_indexed 2020-07-21T13:10:33Z
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spelling 2020-07-21T12:28:06.8050679 v2 49905 2019-04-05 3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE) e0ba5d7ece08cd70c9f8f8683996454a 0000-0003-3270-0805 Mike Jennings Mike Jennings true false 2019-04-05 ACEM The cubic polytype of SiC (3C-SiC) is the only one that can be grown on silicon substrate with the thickness required for targeted applications. Possibility to grow such layers has remained for a long period a real advantage in terms of scalability. Even the relatively narrow band-gap of 3C-SiC (2.3eV), which is often regarded as detrimental in comparison with other polytypes, can in fact be an advantage. However, the crystalline quality of 3C-SiC on silicon has to be improved in order to benefit from the intrinsic 3C-SiC properties. In this project new approaches for the reduction of defects will be used and new compliance substrates that can help to reduce the stress and the defect density at the same time will be explored. Numerical simulations will be applied to optimize growth conditions and reduce stress in the material. The structure of the final devices will be simulated using the appropriated numerical tools where new numerical model will be introduced to take into account the properties of the new material. Thanks to these simulations tools and the new material with low defect density, several devices that can work at high power and with low power consumption will be realized within the project. Journal Article Materials Science Forum 924 913 918 1662-9752 30 6 2018 2018-06-30 10.4028/www.scientific.net/MSF.924.913 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University 2020-07-21T12:28:06.8050679 2019-04-05T09:48:45.3481688 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Francesco La Via 1 Fabrizio Roccaforte 2 Antonino La Magna 3 Roberta Nipoti 4 Fulvio Mancarella 5 Peter Wellman 6 Danilo Crippa 7 Marco Mauceri 8 Peter Ward 9 Leo Miglio 10 Marcin Zielinski 11 Adolf Schöner 12 Ahmed Nejim 13 Laura Vivani 14 Rositza Yakimova 15 Mikael Syväjärvi 16 Gregory Grosset 17 Frank Torregrosa 18 Michael Jennings 19 Philip A. Mawby 20 Ruggero Anzalone 21 Salvatore Coffa 22 Hiroyuki Nagasawa 23 Mike Jennings 0000-0003-3270-0805 24 49905__13402__c7ce514b2e264db1b9fad6e6ea60bed4.pdf lavia2018.pdf 2019-04-05T09:51:59.2300000 Output 3741313 application/pdf Version of Record true 2019-04-05T00:00:00.0000000 Distributed under the terms of a Creative Commons Attribution (CC-BY-4.0) true eng
title 3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)
spellingShingle 3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)
Mike Jennings
title_short 3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)
title_full 3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)
title_fullStr 3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)
title_full_unstemmed 3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)
title_sort 3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)
author_id_str_mv e0ba5d7ece08cd70c9f8f8683996454a
author_id_fullname_str_mv e0ba5d7ece08cd70c9f8f8683996454a_***_Mike Jennings
author Mike Jennings
author2 Francesco La Via
Fabrizio Roccaforte
Antonino La Magna
Roberta Nipoti
Fulvio Mancarella
Peter Wellman
Danilo Crippa
Marco Mauceri
Peter Ward
Leo Miglio
Marcin Zielinski
Adolf Schöner
Ahmed Nejim
Laura Vivani
Rositza Yakimova
Mikael Syväjärvi
Gregory Grosset
Frank Torregrosa
Michael Jennings
Philip A. Mawby
Ruggero Anzalone
Salvatore Coffa
Hiroyuki Nagasawa
Mike Jennings
format Journal article
container_title Materials Science Forum
container_volume 924
container_start_page 913
publishDate 2018
institution Swansea University
issn 1662-9752
doi_str_mv 10.4028/www.scientific.net/MSF.924.913
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description The cubic polytype of SiC (3C-SiC) is the only one that can be grown on silicon substrate with the thickness required for targeted applications. Possibility to grow such layers has remained for a long period a real advantage in terms of scalability. Even the relatively narrow band-gap of 3C-SiC (2.3eV), which is often regarded as detrimental in comparison with other polytypes, can in fact be an advantage. However, the crystalline quality of 3C-SiC on silicon has to be improved in order to benefit from the intrinsic 3C-SiC properties. In this project new approaches for the reduction of defects will be used and new compliance substrates that can help to reduce the stress and the defect density at the same time will be explored. Numerical simulations will be applied to optimize growth conditions and reduce stress in the material. The structure of the final devices will be simulated using the appropriated numerical tools where new numerical model will be introduced to take into account the properties of the new material. Thanks to these simulations tools and the new material with low defect density, several devices that can work at high power and with low power consumption will be realized within the project.
published_date 2018-06-30T04:46:36Z
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score 11.04748

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