Jennings, M., Via, F. L., Roccaforte, F., Magna, A. L., Nipoti, R., Mancarella, F., . . . Nagasawa, H. (2018). 3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE). Materials Science Forum, 924, pp. 913-918. doi:10.4028/www.scientific.net/MSF.924.913
Chicago Style CitationJennings, Mike, et al. "3C-SiС Hetero-Epitaxially Grown On Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)." Materials Science Forum 924 (2018): 913-918.
MLA CitationJennings, Mike, et al. "3C-SiС Hetero-Epitaxially Grown On Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)." Materials Science Forum 924 (2018): 913-918.